C4H2327N55PX

C4H2327N55PX

$26.96
  • Description:RF MOSFET 50V 6DFN
  • Series:-

SKU:9746f818fd6b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET 50V 6DFN
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:-
  • Frequency:2.3GHz ~ 2.69GHz
  • Gain:19.6dB
  • Voltage - Test:50 V
  • Current Rating (Amps):774µA
  • Noise Figure:-
  • Current - Test:30 mA
  • Power - Output:50W
  • Voltage - Rated:150 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VDFN Exposed Pad
  • Supplier Device Package:6-DFN (7x6.5)
  • Configuration:N-Channel

Download product information

C4H2327N55PX

Overview

The C4H2327N55PX is a gallium nitride on silicon (GaN-on-Si) power transistor designed for high-frequency radio frequency applications. Manufactured by Ampleon, this device utilizes advanced GaN technology to deliver high power density and efficiency in compact form factors. It is engineered for robust performance in demanding RF environments, offering reliable operation across specified frequency bands. The component integrates optimized thermal management capabilities within its package structure to support sustained output power levels required by modern communication infrastructure.

Feature Summary

  • Utilizes Gallium Nitride on Silicon technology for enhanced power density
  • Optimized for high-efficiency radio frequency amplification
  • Designed with integrated thermal management for sustained operation

Applications

  • Base station power amplifiers
  • Broadband RF amplifier modules
  • Wireless communication infrastructure

Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the supplier provides official documentation from Ampleon or authorized distributors. Ensure compliance with RoHS directives and check for any specific handling requirements related to electrostatic discharge during procurement and storage processes.

Selection Notes

Evaluate thermal resistance parameters against system cooling capabilities. Verify impedance matching networks align with the device's input and output characteristics. Consider the operating frequency range and required linearity specifications. Ensure the selected variant meets the voltage and current ratings necessary for the target application environment.

Part Context

This part belongs to Ampleon's portfolio of GaN-on-Si transistors aimed at replacing traditional LDMOS technologies in certain RF applications. The series focuses on improving energy efficiency and reducing footprint in base station architectures. It represents a shift towards wider bandgap semiconductors for improved performance metrics in wireless communications.

Replacement Considerations

Direct replacements require identical pinout compatibility and electrical specifications. Verify thermal interface material compatibility if substituting in existing designs. Consult Ampleon technical support for validated alternative part numbers within the same product family before implementation.

C4H2327N55PXC4H2327N55PX
$26.96
Buy Now