C4H2327N55PZ

C4H2327N55PZ

$35.63
  • Description:RF MOSFET GAN 50V 6DFN
  • Series:-

SKU:5a66e88e6343 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET GAN 50V 6DFN
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:GaN
  • Frequency:2.3GHz ~ 2.69GHz
  • Gain:19.6dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:30 mA
  • Power - Output:50W
  • Voltage - Rated:150 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VDFN Exposed Pad
  • Supplier Device Package:6-DFN (7x6.5)
  • Configuration:-

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C4H2327N55PZ

Overview

The C4H2327N55PZ is a Gallium Nitride (GaN) packaged Doherty power transistor designed for base station applications in the 2300 MHz to 2690 MHz frequency range. It features an internally matched design and lower output capacitance optimized for Doherty configurations. Typical performance at Tcase = 25 °C includes a drain efficiency of 54.1% with 6.8 W average output power at 2300-2400 MHz under 1-carrier W-CDMA testing, and 55% efficiency with 7.8 W average output power at 2496-2690 MHz. Pulsed CW operation yields up to 46.9 W output power at 2300-2400 MHz and 46.5 W at 2496-2690 MHz.

Feature Summary

  • Excellent digital pre-distortion capability
  • High efficiency
  • Designed for broadband operation
  • Lower output capacitance for improved performance in Doherty applications
  • Internally matched for ease of use

Applications

  • RF power amplifier for base stations
  • Multi carrier applications in the 2300 MHz to 2690 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation before purchase. The 'Z' suffix indicates tape and reel packaging with a minimum orderable quantity of 1000 pieces. Confirm RoHS compliance status directly through official Ampleon channels or authorized distributors to ensure adherence to environmental standards.

Selection Notes

Select this component for Doherty amplifier architectures requiring high efficiency and linearity in cellular base stations. Ensure the application circuit supports the specified VDS operating voltage and thermal management requirements. Verify impedance matching networks align with the provided load-pull data for optimal power gain and drain efficiency across the target frequency band.

Part Context

This device belongs to the C4H2327N55P product series manufactured by Ampleon. It utilizes a DFN-7x6.5-6-1 package with an exposed ground backside. The part is classified as a Power GaN transistor intended for production use within the telecommunications infrastructure sector.

Replacement Considerations

Consult the official Ampleon datasheet for confirmed substitute part numbers. No alternative models are explicitly listed as direct replacements in the provided documentation.

C4H2327N55PZC4H2327N55PZ
$35.63
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