C4H2350N05X

Overview

The C4H2350N05X is a high-power LDMOS transistor manufactured by Ampleon USA Inc. It belongs to the C4H series, designed for RF power amplifier applications in cellular infrastructure. The device operates at frequencies up to 2100 MHz and delivers significant output power with high efficiency. Key electrical parameters include a drain-source voltage of 65 V, a typical output power of 2350 W at 2100 MHz, and a gain of approximately 18 dB. The component utilizes a robust ceramic package suitable for high-temperature environments, ensuring reliability in demanding base station transmitter modules.

Feature Summary

• High power density design optimized for cellular base station transmitters
• Robust thermal performance using advanced ceramic packaging technology
• Enhanced linearity characteristics supporting complex modulation schemes

Applications

• GSM/EDGE base station power amplifiers
• WCDMA/HSPA cellular infrastructure transmitters
• LTE MIMO power amplifier modules

Procurement Notes

Verify the specific suffix code on the component marking against the official Ampleon datasheet to confirm pinout configuration and thermal pad specifications. Ensure the supplier provides traceability documentation compliant with automotive or industrial standards if required for your assembly process. Cross-reference the lot date code to verify freshness before soldering.

Selection Notes

Select this component when designing for high-output power requirements in the 2100 MHz band. Consider the thermal resistance values provided in the datasheet for heatsink design. Evaluate the bias network requirements to match the gate drive voltage and current specifications for optimal efficiency and linearity balance in your specific topology.

Part Context

This part is part of Ampleon's C4H family of LDMOS transistors, widely used in telecommunications. It serves as a critical active element in power amplifier modules for mobile network infrastructure. The series is known for balancing high power output with manageable drive requirements, making it a standard choice for macro cell base stations.

Replacement Considerations

Check for direct cross-references from other manufacturers such as NXP Semiconductors or Qorvo. Verify pin-to-pin compatibility and identical electrical parameters before substitution. Ensure the replacement device meets the same thermal and mechanical mounting requirements.