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The C4H2350N05Z is a 5 W Gallium Nitride (GaN) packaged power transistor designed for base station applications. It operates within the 2300 MHz to 5000 MHz frequency range and utilizes a DFN-4.5x4-6-1 package with an exposed backside ground terminal. The device supports Class-AB operation with a drain-source voltage of 48 V and quiescent current of 10 mA. Typical performance includes a power gain of 18.5 dB, drain efficiency of 13.0%, and output power at 3 dB compression of 36.6 W under pulsed CW conditions.
Verify the specific ordering suffix Z against the manufacturer's official documentation to confirm packing details. The datasheet indicates that the Z suffix corresponds to TR7 packaging with a quantity of 1000 pieces per reel. Ensure compatibility with dry pack storage requirements before procurement.
Select this component for designs requiring high linearity and efficiency in wideband RF amplification. Verify thermal management capabilities as the device generates significant heat during operation. Confirm impedance matching networks align with the provided load-pull data for optimal power transfer and stability.
This part belongs to Ampleon's portfolio of GaN power transistors intended for wireless infrastructure. It complements other devices in the series by offering robust performance in multi-carrier environments. The technology leverages advanced semiconductor processes to achieve superior linearity compared to traditional silicon-based solutions.
Consult the manufacturer's official substitution guide for verified alternatives. Cross-referencing pinouts, thermal resistance, and electrical characteristics is essential when considering replacement options to ensure circuit compatibility.