C4H27F400AVZ

Overview

The C4H27F400AVZ is a discrete LDMOS RF power transistor designed for macro base station applications. It operates within the 2496–2690 MHz frequency band and utilizes an ACC-780 air-cavity ceramic package (SOT1249B). The device is rated for a drain voltage of 48 V, delivering a peak output power of 400 W with a drain efficiency of 56.5% and a gain of 15.1 dB.

Feature Summary

• High-power capability in a compact air-cavity ceramic package
• Optimized for high-efficiency operation in macro base stations
• Designed for seamless integration into driver and final amplifier line-ups

Applications

• Macro base station power amplifiers
• 4G LTE infrastructure
• 5G NR infrastructure

Procurement Notes

Verify the specific datasheet version and electrical characteristics directly from Ampleon before design finalization. Confirm that the ACC-780 package outline matches your PCB footprint requirements. Ensure thermal management solutions are compatible with the package dimensions to maintain reliability under high-power conditions.

Selection Notes

Select this component for designs requiring approximately 400 W peak output power in the 2.5 GHz band. Pair with the B11G2327N71D driver as recommended by the manufacturer. Evaluate system-level efficiency targets against the 56.5% drain efficiency specification to determine suitability for your specific macro cell architecture.

Part Context

This part belongs to Ampleon’s Macro products portfolio, specifically categorized as a Macro final stage device. It is listed alongside other high-power LDMOS transistors intended for wireless infrastructure. The naming convention indicates it is a silicon-based device operating at 48 V with external decoupling leads.

Replacement Considerations

The catalog lists the C4H27F700AVZ as a related product in the same frequency band offering higher power. No direct substitute part numbers are documented in the provided source material.