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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 450A
- Series：CAB425M12XM3
- Mfr：Wolfspeed, Inc.
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：450A
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 425A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 115mA
- Gate Charge (Qg) (Max) @ Vgs：1135nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：30.7nF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The Wolfspeed CAB425M12XM3 is a 1200 V, 425 A Silicon Carbide (SiC) half-bridge power module. It utilizes third-generation SiC MOSFET technology with a typical on-state resistance of 3.2 mΩ at 25 °C and 5.6 mΩ at 175 °C. The device supports a maximum junction temperature of 175 °C and features an integrated NTC temperature sensor for thermal monitoring. Key electrical parameters include a drain-source breakdown voltage of 1200 V, a continuous drain current of 494 A at 25 °C case temperature, and a stray inductance of 6.7 nH.
Feature Summary
- Implements switching-optimized third-generation SiC MOSFET technology for high efficiency.
- Features a low-inductance design with a silicon nitride insulator and copper baseplate.
- Includes an isolated, integrated NTC temperature sensor for system protection.
- Provides dedicated high-side Kelvin-drain pins for direct gate driver overcurrent sensing.
Applications
- Motor & Motion Control
- Vehicle Fast Chargers
- Uninterruptible Power Supplies
- Smart-Grid / Grid-Tied Distributed Generation
- Traction Drives
Procurement Notes
Verify the specific revision number against the manufacturer's latest documentation to ensure parameter accuracy. Confirm that the ordering suffix matches the required package and terminal configuration. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high power density and operation up to 175 °C junction temperature. Ensure the cooling system can maintain the case temperature within limits to support the specified continuous drain current. Verify that the gate driver circuitry accommodates the recommended operational gate-source voltage range of -4 V to +15 V.
Part Context
This module belongs to the XM3 series of Wolfspeed SiC power modules. It is designed for high-performance power conversion systems where low switching losses and high thermal stability are critical. The module integrates both the high-side and low-side switches in a single half-bridge configuration.
Replacement Considerations
Direct replacements must match the 1200 V rating, 425 A current capacity, and half-bridge topology. Verify pinout compatibility, specifically the placement of Kelvin-drain pins and NTC sensors. Check if alternative modules offer similar stray inductance levels to maintain switching performance.
FAQ
What is the recommended operational gate-source voltage range?
The recommended static operational gate-source voltage range is -4 V to +15 V.
How does the on-state resistance change with temperature?
The typical on-state resistance increases from 3.2 mΩ at 25 °C to 5.6 mΩ at 175 °C junction temperature.
What is the purpose of the Kelvin-drain pins?
The dedicated high-side Kelvin-drain pins enable direct voltage sensing for gate driver overcurrent protection.
