CAB5R0A23GM4T

CAB5R0A23GM4T

$340.26
  • Description:MOSFET 2N-CH 2300V 150A
  • Series:WolfPACK™

SKU:5e9fc04d9586 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 2300V 150A
  • Series:WolfPACK™
  • Mfr:Wolfspeed, Inc.
  • Package:Box
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):2300V (2.3kV)
  • Current - Continuous Drain (Id) @ 25°C:150A
  • Rds On (Max) @ Id, Vgs:7mOhm @ 240A, 15V
  • Vgs(th) (Max) @ Id:4V @ 114mA
  • Gate Charge (Qg) (Max) @ Vgs:880nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds:36600pF @ 1.5kV
  • Power - Max:710W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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CAB5R0A23GM4T

Overview

The Wolfspeed CAB5R0A23GM4T is a 2300 V, 5.0 mΩ Silicon Carbide half-bridge power module utilizing Gen4 technology with a soft body diode. It features press-fit pins for assembly and an aluminum nitride substrate. The T suffix indicates the inclusion of pre-applied phase change thermal interface material. Key electrical parameters include a maximum drain-source voltage of 2300 V, a continuous DC drain current of 150 A at THS = 75 °C, and a pulsed drain current of 600 A. The module operates within a virtual junction temperature range of -40 °C to 150 °C.

Feature Summary

  • Fully SiC MOSFET-based architecture providing ultra-low switching and conduction losses
  • Zero turn-off tail current characteristic inherent to the MOSFET structure
  • Soft body diode implementation reducing reverse recovery energy
  • Aluminum nitride substrate enabling high thermal conductivity and compact system design

Applications

  • High-efficiency converters and inverters
  • Energy storage systems
  • DC fast chargers
  • Solar inverters and renewable energy applications

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'T' suffix denotes the inclusion of pre-applied phase change thermal interface material, whereas the non-T version lacks this feature. Confirm that the selected variant matches the thermal management requirements of the target application before finalizing orders.

Selection Notes

Select this component for high-voltage applications requiring low on-state resistance and efficient thermal performance. Ensure heatsink temperatures remain within operational limits to maintain the specified 150 A continuous current rating. Verify compatibility with recommended gate driver boards such as the CGD1700HB2M-UNA or third-party alternatives listed in the datasheet.

Part Context

This part belongs to the WolfPACK™ series of silicon carbide power modules designed for harsh environments. It utilizes industry-standard 48 mm press-fit packaging. The module is UL STD 1557 certified as an electrically isolated semiconductor device, facilitating compliance in industrial power electronics designs.

Replacement Considerations

The CAB5R0A23GM4 serves as the direct functional equivalent without pre-applied thermal interface material. Designers must evaluate whether the absence of the TIM affects the thermal resistance and mounting torque specifications for their specific heatsink interface.

FAQ

What is the difference between the CAB5R0A23GM4 and CAB5R0A23GM4T?

The primary difference is the inclusion of pre-applied phase change thermal interface material in the CAB5R0A23GM4T variant. The standard CAB5R0A23GM4 does not include this material.

Is this module suitable for linear mode operation?

No. The datasheet explicitly states that the Safe Operating Area (SOA) curves are not intended for use in linear mode operation.

What certification does this module hold regarding electrical isolation?

The module is certified by Intertek Testing Solutions as an 'Electrically Isolated Semiconductor Devices – Component' in accordance with UL STD 1557.

CAB5R0A23GM4TCAB5R0A23GM4T
$340.26
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