CAB650M17HM3

$3,780.38

Description：MOSFET 2N-CH 1700V 916A MODULE
Series：-

SKU:fe2b3768835d Category: FET, MOSFET Arrays Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1700V 916A MODULE
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：916A (Tc)
Rds On (Max) @ Id, Vgs：1.86mOhm @ 650A, 15V
Vgs(th) (Max) @ Id：3.6V @ 305mA
Gate Charge (Qg) (Max) @ Vgs：2988nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：97300pF @ 1200V
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Grade：-
Qualification：-

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CAB650M17HM3

Overview

The Wolfspeed CAB650M17HM3 is a Silicon Carbide half-bridge power module rated for 1700 V and 650 A. It utilizes third-generation SiC MOSFET technology with a low-inductance, low-profile 62 mm footprint. The device features an AlSiC baseplate and silicon nitride insulator for high reliability. Key electrical parameters include a drain-source breakdown voltage of 1700 V, a continuous drain current of 916 A at 25 °C case temperature, and a typical on-state resistance of 1.86 mΩ. The module supports operation up to a virtual junction temperature of 175 °C and includes integrated NTC thermistors for thermal monitoring.

Feature Summary

Implements switching optimized third generation SiC MOSFET technology
Features a lightweight AlSiC baseplate and high reliability silicon nitride insulator
Designed with a low inductance, low profile 62 mm footprint for system retrofitting

Applications

Railway & Traction systems
Solar energy inverters
Electric Vehicle (EV) Chargers
Industrial Automation & Testing equipment

Procurement Notes

Verify the specific ordering suffix when purchasing. The CAB650M17HM3 designation indicates the module without pre-applied phase change thermal interface material. The variant ending in HM3T includes pre-applied phase change thermal interface material. Confirm the required configuration matches the application's thermal management design before procurement.

Selection Notes

Select this module for high-voltage applications requiring robust performance up to 1700 V. Ensure the gate drive circuitry supports the recommended static gate-source voltage range of -4 V to +15 V. Verify that the cooling system can maintain the case temperature within limits to support the specified continuous drain current ratings at the desired operating junction temperature.

Part Context

This component belongs to the Wolfspeed HM3 power module platform, which is optimized for Silicon Carbide devices. It shares the standard 62 mm industry-compatible footprint with other modules in the series, facilitating direct replacement or integration into existing system designs that utilize this form factor.