CBB021M12FM3T

Overview

The CBB021M12FM3 is a 1200 V, 21 mΩ Silicon Carbide full-bridge power module from Wolfspeed. It features four MOSFET positions with a maximum drain-source voltage of 1200 V and a typical on-state resistance of 21 mΩ at 25°C. The device supports a DC continuous drain current of 50 A at a heatsink temperature of 50°C and a virtual junction temperature up to 175°C. Key electrical parameters include a gate threshold voltage of 2.5 V typically, an internal gate resistance of 3.3 Ω, and a total gate charge of 162 nC. The module includes an integrated NTC thermistor with a rated resistance of 5.0 kΩ at 25°C for thermal monitoring.

Feature Summary

• Fully Silicon Carbide MOSFET-based construction for ultra-low conduction and switching losses
• Press-fit pin technology designed for simplified mechanical assembly and robust connection
• Integrated NTC thermistor for precise real-time junction temperature monitoring
• Optional pre-applied phase change thermal interface material to reduce system integration complexity

Applications

• DC-DC Converters
• High-Efficiency Converters and Inverters
• Renewable Energy Systems
• Smart-Grid and Grid-Tied Distributed Generation
• Electric Vehicle Chargers

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'T' suffix indicates the inclusion of pre-applied phase change thermal interface material, while the absence of this suffix denotes the version without it. Confirm that the received component matches the required thermal configuration for your specific heatsink design and mounting procedure to ensure proper thermal performance and UL compliance.

Selection Notes

Select the CBB021M12FM3 variant based on whether pre-applied thermal interface material is desired for the application. Ensure the gate driver circuitry supports the recommended turn-on voltage of 15 V and the negative turn-off voltage of -4 V. Verify that the PCB layout minimizes stray inductance, as the module has a specified stray inductance of 14.2 nH between DC terminals, which impacts switching performance and voltage overshoot.

Part Context

This component belongs to the Wolfspeed WolfPACK family of silicon carbide power modules. It utilizes press-fit termination technology rather than traditional soldering or wire bonding for main terminals. The module is certified under UL STD 1557 for electrically isolated semiconductor devices. It is designed to replace silicon IGBT modules in high-frequency, high-efficiency applications requiring reduced thermal management overhead.

Replacement Considerations

Public datasheets do not list direct cross-referenced substitute part numbers. When replacing legacy silicon IGBT modules, verify that the new gate drive voltages are compatible with SiC requirements and that the PCB footprint accommodates the press-fit pin dimensions. Check if the existing thermal interface material application method aligns with the optional pre-applied TIM of this specific model.

FAQ

What is the difference between CBB021M12FM3 and CBB021M12FM3T?

The CBB021M12FM3T includes pre-applied phase change thermal interface material, whereas the CBB021M12FM3 does not.

What is the recommended gate drive voltage range for this module?

The recommended operational gate-source voltage is +15 V for turn-on and -4 V for turn-off, with a transient maximum of +23 V and -10 V.

Does this module include an integrated temperature sensor?

Yes, the module includes an integrated NTC thermistor with a rated resistance of 5.0 kΩ at 25°C for monitoring junction temperature.