CE3512K2

Overview

The CE3512K2 is a Gallium Arsenide (GaAs) RF Low Noise FET designed for high-frequency applications. It operates at 12 GHz with a typical noise figure of 0.30 dB and associated gain of 13.7 dB under standard conditions (VDS = 2 V, ID = 10 mA). The device utilizes a Micro-X hollow plastic package to minimize parasitic effects. Absolute maximum ratings include a drain-to-source voltage of 4.0 V and a total power dissipation of 125 mW. Recommended operating ranges specify a drain current between 5 mA and 15 mA.

Feature Summary

• Super low noise figure and high associated gain optimized for signal integrity
• Hollow air cavity plastic package construction for reduced parasitics
• Gallium arsenide technology for superior microwave performance

Applications

• KU Band LNB first stage amplification
• Low noise amplifier circuits in satellite communication systems
• Microwave receiver front-ends requiring minimal signal degradation

Procurement Notes

Verify the specific ordering suffix when purchasing, as the base part number may correspond to different packaging configurations such as embossed tape dimensions or reel quantities. Confirm compliance with RoHS directives and handle GaAs materials according to safety guidelines regarding toxic substance disposal. Ensure ESD precautions are strictly followed during storage and assembly to prevent device damage.

Selection Notes

Select this component for designs requiring ultra-low noise performance at 12 GHz. Evaluate thermal management capabilities against the 125 mW total power dissipation limit and the +150 °C channel temperature rating. Verify that the recommended operating range of 5 mA to 15 mA drain current aligns with the system's biasing requirements and power budget constraints.

Part Context

This device belongs to CEL's portfolio of RF Low Noise FETs, specifically engineered for Ku-band applications. It shares design characteristics with other super low noise variants like the CE3514M4 but is distinct in its package type and frequency optimization. The Micro-X package provides a compact form factor suitable for dense PCB layouts in modern communication hardware.

Replacement Considerations

Direct substitutes within the same package and electrical specifications should be prioritized. Alternative devices from other manufacturers must match the 12 GHz noise figure and gain characteristics. Verify pin compatibility and thermal resistance values before implementation to ensure seamless integration without circuit redesign.

FAQ

What is the typical noise figure of the CE3512K2?

The typical noise figure is 0.30 dB at 12 GHz with VDS = 2 V and ID = 10 mA.

What is the maximum drain-to-source voltage?

The absolute maximum drain-to-source voltage rating is 4.0 V.

What package type does the CE3512K2 use?

It uses a Micro-X hollow plastic package.