CE3514M4-C2

CE3514M4-C2

$1.88
  • Description:RF MOSFET PHEMT FET 2V 4MINIMOLD
  • Series:-

SKU:dc9e31d93226 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 2V 4MINIMOLD
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:pHEMT FET
  • Frequency:12GHz
  • Gain:12.2dB
  • Voltage - Test:2 V
  • Current Rating (Amps):68mA
  • Noise Figure:0.62dB
  • Current - Test:15 mA
  • Power - Output:125mW
  • Voltage - Rated:4 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:4-Super Mini Mold
  • Configuration:-

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CE3514M4-C2

Overview

The CE3514M4-C2 is a gallium arsenide (GaAs) pHEMT RF JFET transistor designed for low-noise applications. It operates at frequencies up to 12 GHz and features a flat-lead 4-pin thin-type super minimold package. Key electrical parameters include a typical noise figure of 0.42 dB and an associated gain of 12.2 dB, measured at VDS=2V, ID=10mA, and f=12GHz. The device supports a drain-to-source voltage of 4.0 V and a gate-to-source voltage of -3.0 V. It has a continuous drain current rating of 10 mA and a total power dissipation of 125 mW. The operating temperature range spans from -55°C to +125°C.

Feature Summary

  • Low noise figure and high associated gain
  • Original dual mold plastic package

Applications

  • DBS LNB gain-stage
  • DBS LNB mix-stage
  • Low noise amplifier for microwave communication systems

Procurement Notes

Verify the specific ordering suffix '-C2' against official CEL documentation to confirm packaging details, as it indicates embossed tape with an 8 mm width and a minimum order quantity of 15,000 pieces per reel. Ensure compliance with RoHS directives and handle the GaAs material according to safety guidelines regarding toxic substances. Confirm that the component meets all applicable environmental regulations before final procurement.

Selection Notes

Select this component for designs requiring minimal signal degradation at 12 GHz. The device offers a typical noise figure of 0.42 dB and 12.2 dB gain under standard bias conditions. Consider the 125 mW power dissipation limit and the -55°C to +125°C operating temperature range when designing thermal management solutions. The minimold-4 package requires appropriate surface-mount assembly techniques.

Part Context

The CE3514M4-C2 belongs to the CE3514M4 series of RF Low Noise FETs manufactured by CEL. This series utilizes gallium arsenide technology to achieve superior performance in microwave frequency bands. The part is specifically engineered for applications demanding high linearity and low noise characteristics in compact surface-mount packages.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility with the 12 GHz operating frequency, 0.42 dB noise figure requirement, and minimold-4 package dimensions. Ensure any replacement maintains similar electrical characteristics and thermal performance within the specified operating temperature range.

FAQ

What is the typical noise figure of the CE3514M4-C2?

The typical noise figure is 0.42 dB, measured at VDS=2V, ID=10mA, and f=12GHz.

What is the maximum drain-to-source voltage rating?

The absolute maximum drain-to-source voltage (VDS) rating is 4.0 V.

What package type does the CE3514M4-C2 use?

It uses a flat-lead 4-pin thin-type super minimold package.

CE3514M4-C2CE3514M4-C2
$1.88
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