CE3521M4

Overview

The CE3521M4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) designed for radio frequency applications. It operates at frequencies up to 20 GHz with a typical noise figure of 0.70 dB and associated gain of 11.9 dB at VDS = 2 V and ID = 10 mA. The device features a flat-lead 4-pin thin-type super minimold package, suitable for surface mount technology. Absolute maximum ratings include a drain-to-source voltage of 4.0 V, gate-to-source voltage of -3.0 V, and total power dissipation of 125 mW. It supports an operating temperature range from -55°C to +125°C.

Feature Summary

• Low noise figure and high associated gain optimized for microwave communication systems
• Original dual mold plastic package construction
• Flat-lead 4-pin thin-type super minimold package design

Applications

• DBS LNB gain-stage
• DBS LNB mix-stage
• Low noise amplifier for microwave communication systems

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard CE3521M4 typically ships in bulk, while the CE3521M4-C2 variant is supplied in embossed tape on reels. Confirm packaging requirements with the supplier to ensure compatibility with automated assembly equipment. Check RoHS compliance status as indicated in official documentation before finalizing procurement orders.

Selection Notes

Select this component for designs requiring low noise performance at 20 GHz. Ensure biasing circuits maintain VDS within the recommended range of 1 V to 3 V and ID between 5 mA and 15 mA. Consider thermal management strategies given the 125 mW power dissipation limit. Verify that the PCB layout accommodates the specific dimensions of the flat-lead 4-pin thin-type super minimold package.

Part Context

This device belongs to CEL's portfolio of RF low noise FETs utilizing GaAs pHEMT technology. It is engineered specifically for high-frequency signal amplification where minimal noise addition is critical. The product line targets satellite communications and microwave infrastructure markets.

Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, compare noise figure, gain, and package footprint. Ensure any replacement maintains compatibility with the 4-pin flat-lead form factor and similar electrical characteristics at 20 GHz.

FAQ

What is the typical noise figure at 20 GHz?

The typical noise figure is 0.70 dB when measured at VDS = 2 V, ID = 10 mA, and f = 20 GHz.

What is the absolute maximum drain-to-source voltage?

The absolute maximum rating for drain-to-source voltage (VDS) is 4.0 V.

What package type does the CE3521M4 use?

It uses a flat-lead 4-pin thin-type super minimold package.