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The CE7613M4-C2 is a silicon RF JFET transistor designed for low-noise applications up to 12 GHz. It features a typical associated gain of 14.1 dB and a minimum noise figure of 0.35 dB at 12 GHz with Vds=2V and Id=10mA. The device operates within a drain-to-source voltage range of +1V to +3V and supports a continuous drain current from 5 mA to 15 mA. Key electrical parameters include a transconductance of 51.8 mS (min) and a saturated drain current of 6.3 mA (min). It utilizes a flat-lead 4-pin super minimold package and functions reliably across an operating temperature range of -55°C to +125°C.
Verify the specific ordering suffix '-C2' against official CEL documentation to confirm it denotes the embossed tape reel supply form containing 15,000 pieces per reel. Ensure that the component handling procedures strictly adhere to industry-standard ESD precautions during storage and assembly to prevent damage from static discharge potentials.
Select this component when designing Ku-band systems requiring minimal noise figures around 0.35 dB. Confirm that the circuit design maintains the drain-to-source voltage between +1V and +3V and sets the drain current near 10 mA to achieve optimal transconductance and gain specifications while staying within absolute maximum ratings.
This part belongs to the CE7613M4 series of RF low-noise FETs manufactured by CEL. It is specifically engineered as a silicon-based solution for high-frequency applications, distinguishing itself through its dual-mold plastic package construction which offers durability compared to standard lead frames in similar frequency ranges.
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify that any replacement matches the 12 GHz operational frequency, maintains comparable noise figure and gain metrics, and fits the flat-lead 4-pin super minimold package dimensions.