CE7613M4

Overview

The CEL CE7613M4 is a silicon-based pHEMT RF JFET transistor designed for low-noise applications up to 12 GHz. It features a minimold-4 SMD package with single configuration. Key electrical parameters include a gain of 14.1 dB, a noise figure of 0.35 dB, and a minimum forward transconductance of 51.8 mS. The device operates with a drain-source breakdown voltage of 2 V and a gate-source cutoff voltage of 400 mV. Continuous drain current is rated at 10 mA, with power dissipation of 125 mW. Operating temperatures range from -55°C to +125°C.

Feature Summary

• Utilizes silicon pHEMT technology for RF signal amplification
• Optimized for ultra-low noise performance in high-frequency circuits
• Designed for surface-mount integration via minimold-4 packaging

Applications

• Low-noise amplifier stages in microwave communication systems
• Signal conditioning in radar receiver front-ends
• Satellite navigation system input stages

Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number CE7613M4 typically denotes bulk packaging, while suffixes like -C2 indicate reel or cut-tape options. Confirm the required packaging format matches your assembly line equipment before placing orders to ensure compatibility with standard pick-and-place processes.

Selection Notes

Select this component when silicon-based cost efficiency is prioritized over higher frequency operation. Compare against GaAs alternatives like the CE3514M4 if lower breakdown voltage or different noise characteristics are acceptable. Ensure the 2 V drain-source limit aligns with the target circuit biasing requirements and that the minimold-4 footprint fits the PCB layout constraints.

Part Context

This component belongs to CEL's portfolio of RF JFET transistors engineered for microwave frequencies. It represents a silicon implementation within their low-noise FET lineup, offering a balance between performance and manufacturability compared to compound semiconductor devices. The minimold-4 package is standard for small-signal RF applications requiring reliable surface-mount assembly.

Replacement Considerations

Direct functional substitutes may include other silicon RF JFETs with similar 12 GHz specifications. For higher performance needs, consider GaAs variants such as the CE3514M4, noting differences in material technology and breakdown voltages. Verify pinout compatibility and thermal characteristics before substituting any alternative device.