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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 7A 8SOP
- Series：-
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Rds On (Max) @ Id, Vgs：26mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1050pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The UMW CEM9926A is a dual N-channel enhancement mode field effect transistor housed in an SOP-8 package. It features a drain-source voltage rating of 20 V and a continuous drain current of 7 A at 25°C. The device exhibits low on-state resistance, specified as less than 26 mΩ at VGS = 4.5V, 33 mΩ at VGS = 2.5V, and 42 mΩ at VGS = 1.8V. Key dynamic parameters include a total gate charge of 15.2 nC and a turn-on delay time of 6.5 ns. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Dual N-channel configuration with integrated body diodes for efficient switching applications
- Optimized trench technology for minimized on-state resistance across various gate drive voltages
- Enhanced thermal performance with defined junction-to-lead and junction-to-ambient thermal resistances
Applications
- Low voltage power management systems
- Battery-powered equipment circuits
- DC/DC converter load switches
Procurement Notes
Verify the specific ordering suffix and manufacturing date code against the official UMW datasheet before procurement. Confirm that the SOP-8 package dimensions align with your PCB footprint requirements. Ensure the supplier provides traceability documentation consistent with the manufacturer's quality standards.
Selection Notes
Select this component when a dual N-channel MOSFET with a 20V rating and high current capability is required. Consider the RDS(ON) values at your specific operating VGS levels to ensure efficiency targets are met. Evaluate the thermal dissipation capabilities based on your board layout and ambient temperature conditions.
Part Context
The CEM9926A belongs to the family of dual N-channel enhancement mode field effect transistors produced by UMW. These devices utilize DMOS trench technology to achieve high cell density and low on-resistance. The part is designed for surface mount assembly, offering a compact solution for modern electronic designs requiring efficient power switching.
Replacement Considerations
Cross-reference with other dual N-channel MOSFETs featuring similar 20V ratings and SOP-8 packaging. Verify pinout compatibility and electrical parameter equivalence, particularly regarding RDS(ON) thresholds and gate charge specifications, before substituting.
