CG2H40035P

Overview

The CG2H40035P is a gallium nitride (GaN) high electron mobility transistor (HEMT) from MACOM Technology Solutions. It operates on a 28-volt rail and provides a general-purpose, broadband solution for RF and microwave applications. The device functions within a frequency range of 0 MHz to 6000 MHz. It is packaged in a tray format.

Feature Summary

• Utilizes gallium nitride (GaN) high electron mobility transistor technology
• Designed as a general-purpose, broadband RF power transistor
• Operates from a standard 28-volt power supply rail

Applications

• RF and microwave applications
• Broadband amplifier designs
• General-purpose RF circuit development

Procurement Notes

Verify the specific package type and manufacturer documentation when sourcing this component. Confirm that the intended application aligns with the 28-volt operating requirement and the specified frequency range. Ensure compatibility with the tray packaging format during handling and assembly processes.

Selection Notes

Select this component for designs requiring a GaN HEMT capable of broadband operation up to 6 GHz. The 28-volt operating voltage makes it suitable for standard RF power supply architectures. Consider its general-purpose nature for versatile integration into various RF and microwave system configurations.

Part Context

This part belongs to the CG2H40035 family of GaN HEMTs manufactured by MACOM Technology Solutions. These devices are engineered to provide robust performance in demanding RF environments. The P suffix typically denotes a specific package variant within this product line.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Cross-referencing should be based on identical electrical specifications and package dimensions.