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The CG2H40045F is an unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed for RF and microwave applications. Operating from a 28 V rail, it delivers up to 4 GHz broadband performance with a typical saturated output power (PSAT) of 55 W and drain efficiency of 60% at PSAT. Small signal gain reaches 18 dB at 2.0 GHz and 14 dB at 4.0 GHz. The device features a flange package (440223), supports a maximum drain-source voltage of 120 V, and operates within a junction temperature range up to 225°C.
Verify the specific package configuration required for the application, as the CG2H40045 family includes both pill (CG2H40045P) and flange (CG2H40045F) variants. Confirm that the thermal management solution accommodates the specified junction-to-case thermal resistance and maximum case operating temperatures during continuous wave operation.
Select the CG2H40045F when a flange-mounted package is preferred for thermal dissipation and mechanical stability in high-power RF designs. Ensure the bias circuitry supports the 28 V supply requirement and the gate threshold voltage characteristics. Evaluate the need for large signal models if precise nonlinear simulation is required for the amplifier design.
The CG2H40045F belongs to MACOM's CG2H series of GaN HEMTs, which are engineered for general-purpose broadband RF solutions. This series provides high power density and efficiency, making it suitable for demanding wireless infrastructure and radar applications where wide bandwidth and linearity are critical performance factors.
The CG2H40045P serves as the pill-package alternative within the same electrical specification family. When replacing the CG2H40045F, verify that the new component matches the required package type and mounting style. No other direct cross-compatible substitutes are officially documented.