CG2H80045D-GP4

$134.30

Description：RF MOSFET HEMT 28V DIE
Series：GaN

SKU:89d4f57a9eef Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET HEMT 28V DIE
Series：GaN
Mfr：MACOM Technology Solutions
Package：Tray
Technology：HEMT
Frequency：8GHz
Gain：15dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：500 mA
Power - Output：45W
Voltage - Rated：120 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：Die
Supplier Device Package：Die
Configuration：-

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CG2H80045D-GP4

Overview

The CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die designed for high-power RF applications. It operates at frequencies up to 8.0 GHz with a typical saturated output power of 45 W and drain efficiency of 65% at 28 V bias. The device features a breakdown voltage of 120 V, a gate threshold voltage ranging from -3.8 V to -2.3 V, and a maximum continuous drain current of 4.5 A. Thermal resistance from junction to case is specified at 2.1 °C/W for the bare die configuration.

Feature Summary

High power density utilizing GaN HEMT technology
Capable of operation up to 8.0 GHz frequency range
High breakdown voltage supporting robust performance
Suitable for linear amplification of complex waveforms

Applications

Broadband Amplifiers
Cellular Infrastructure
2-Way Private Radio
Test Instrumentation
Linear amplifiers for OFDM, W-CDMA, EDGE, CDMA waveforms

Procurement Notes

Verify the specific part number against the official MACOM datasheet to ensure correct revision status. Confirm that the procurement includes the required Gel-Pak packaging for bare die handling. Ensure all technical specifications align with the intended system requirements before finalizing orders.

Selection Notes

Select this component for designs requiring high power density and wide bandwidth in the S-band or C-band ranges. Evaluate thermal management strategies carefully due to the high power dissipation capabilities. Verify compatibility with large signal models available for ADS and MWO during the design phase.

Part Context

This component belongs to MACOM's portfolio of GaN on Silicon Carbide (GaN-on-SiC) transistors. These devices leverage the superior properties of GaN, including higher breakdown voltage and thermal conductivity compared to silicon or gallium arsenide alternatives. The product line targets high-efficiency RF power amplification.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. Engineers should evaluate cross-compatibility based on electrical parameters such as breakdown voltage, gain, and package dimensions when considering alternative sources.