CG2H80120D-GP4

Overview

The CG2H80120D is a gallium nitride (GaN) high electron mobility transistor (HEMT) die designed for operation up to 8.0 GHz. It delivers a typical saturated output power of 120 W at 28 V drain bias. The device provides 15 dB small signal gain at 4 GHz and 12 dB at 8 GHz, with a drain efficiency of 65%. Key electrical parameters include a drain-source breakdown voltage of 84 V, a maximum forward gate current of 30 mA, and an operating junction temperature rating of 225 °C.

Feature Summary

• High power density utilizing GaN HEMT technology
• Capable of operation up to 8.0 GHz frequency range
• Supports high temperature operation up to 225 °C junction temperature
• Bare die configuration with non-adhesive tacky membrane immobilization

Applications

• Broadband amplifiers
• Cellular infrastructure
• Test instrumentation
• Class A, AB linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before purchase. Confirm that the received component matches the bare die specification rather than a packaged variant. Ensure handling procedures account for the Gel-Pak shipping container and electrostatic discharge sensitivity inherent to this semiconductor type.

Selection Notes

Select this component when designing circuits requiring high power output and wide bandwidth in the microwave spectrum. Evaluate thermal management requirements carefully due to the high power dissipation and elevated junction temperature capabilities. Verify compatibility with recommended eutectic die attach materials and gold wire bonding methods for optimal performance.

Part Context

This part belongs to MACOM's portfolio of GaN on SiC transistors engineered for superior breakdown voltage and thermal conductivity compared to silicon or gallium arsenide alternatives. It is intended for demanding RF applications where high power density and efficiency are critical design constraints.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternative components, verify matching RF characteristics, power ratings, and physical dimensions to ensure mechanical and electrical compatibility within the existing circuit design.

FAQ

What is the recommended solder material for mounting this die?

The recommended solder is AuSn (80/20) solder using a eutectic die attach procedure.

How should the die be oriented during assembly?

Use the die label marked with XX-YY coordinates to determine the correct orientation.

Is large signal modeling data available for simulation?

Yes, large signal models are available for ADS and MWO software platforms.