CGH27030F

$113.31

Description：RF MOSFET HEMT 28V 440166
Series：GaN

SKU:243996d3ac5b Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET HEMT 28V 440166
Series：GaN
Mfr：MACOM Technology Solutions
Package：Tray
Technology：HEMT
Frequency：3GHz
Gain：14.5dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：150 mA
Power - Output：30W
Voltage - Rated：84 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：440166
Supplier Device Package：440166
Configuration：-

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CGH27030F

Overview

The CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for linear communications from VHF to 3.0 GHz. It operates at a drain-source voltage of 28 V with a peak power capability of 30 W and provides 15 dB small signal gain. The device features a threshold voltage of -3.8 V, a maximum drain-source breakdown voltage of 120 V, and a continuous drain current of 7 A. It supports an operating junction temperature up to 225 °C and dissipates 14 W of power.

Feature Summary

Designed for high efficiency, high gain, and wide bandwidth capabilities in linear applications
Capable of supporting WiMAX Fixed Access 802.16-2004 OFDM and Mobile Access 802.16e OFDMA standards
Available in solder-down pill packages suitable for surface mount technology

Applications

VHF amplifier applications
3G, 4G, and LTE amplifier applications
2.3-2.9 GHz WiMAX and BWA amplifier applications

Procurement Notes

Verify the specific package type and ordering suffix when sourcing components. Confirm that the device meets RoHS compliance requirements as indicated in official documentation. Ensure proper handling procedures are followed due to electrostatic sensitivity classifications. Cross-reference datasheet revision numbers to ensure alignment with design specifications.

Selection Notes

Select this component for designs requiring linear amplification across the VHF to 3 GHz spectrum. Evaluate thermal management strategies to maintain case temperatures within specified limits during operation. Consider the large signal models available for ADS and MWO for accurate circuit simulation and performance prediction.

Part Context

This part belongs to the MACOM CGH27030 series of GaN HEMTs. The series includes variants such as the CGH27030P, which utilizes a screw-down flange package instead of the solder-down configuration found in the CGH27030F. Both variants share similar electrical characteristics tailored for broadband communication systems.