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The CGH31240F is a gallium nitride (GaN) amplifier operating from 2.7 to 3.1 GHz, housed in a ceramic/metal flange package. It delivers a saturated output power of 240 W with a large signal gain of 12 dB and a drain efficiency of 60%. The device features an internally matched 50-ohm input for simplified integration. Electrical specifications are measured at VDS = 28 V, IDQ = 1 A, and TC = 25°C under pulsed conditions.
Verify the specific revision status against the latest MACOM datasheet before finalizing designs. Confirm that the ordering suffix matches the required component type, as the base part number refers to the discrete amplifier while other suffixes may indicate evaluation boards or sample kits. Ensure all handling procedures strictly follow electrostatic discharge protocols.
Select this component for S-Band applications requiring high output power and broad operational bandwidth. The internal 50-ohm matching simplifies circuit design compared to unmatched devices. Verify that the system can accommodate the specified 28 V drain voltage and 1 A quiescent current requirements to ensure optimal performance within the absolute maximum ratings.
This device belongs to MACOM's portfolio of gallium nitride on silicon carbide amplifiers designed for demanding RF environments. It utilizes a 440201 ceramic/metal flange package to facilitate efficient heat dissipation. The product line emphasizes high reliability and consistent performance across wide frequency bands for critical communication and sensing infrastructure.
No direct substitute part numbers are documented in the official datasheet.