CGH31240F

CGH31240F

$537.28
  • Description:RF MOSFET HEMT 28V 440201
  • Series:GaN

SKU:60a368fa2cd6 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET HEMT 28V 440201
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:HEMT
  • Frequency:2.7GHz ~ 3.1GHz
  • Gain:12dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1:00 AM
  • Power - Output:250W
  • Voltage - Rated:120 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:440201
  • Supplier Device Package:440201
  • Configuration:-

Download product information

CGH31240F

Overview

The CGH31240F is a gallium nitride (GaN) amplifier operating from 2.7 to 3.1 GHz, housed in a ceramic/metal flange package. It delivers a saturated output power of 240 W with a large signal gain of 12 dB and a drain efficiency of 60%. The device features an internally matched 50-ohm input for simplified integration. Electrical specifications are measured at VDS = 28 V, IDQ = 1 A, and TC = 25°C under pulsed conditions.

Feature Summary

  • High-efficiency GaN HEMT technology optimized for wide bandwidth applications
  • Internally matched 50-ohm input impedance eliminates external matching networks
  • Robust thermal management capabilities supporting high junction temperatures

Applications

  • S-Band radar systems
  • General RF amplification circuits

Procurement Notes

Verify the specific revision status against the latest MACOM datasheet before finalizing designs. Confirm that the ordering suffix matches the required component type, as the base part number refers to the discrete amplifier while other suffixes may indicate evaluation boards or sample kits. Ensure all handling procedures strictly follow electrostatic discharge protocols.

Selection Notes

Select this component for S-Band applications requiring high output power and broad operational bandwidth. The internal 50-ohm matching simplifies circuit design compared to unmatched devices. Verify that the system can accommodate the specified 28 V drain voltage and 1 A quiescent current requirements to ensure optimal performance within the absolute maximum ratings.

Part Context

This device belongs to MACOM's portfolio of gallium nitride on silicon carbide amplifiers designed for demanding RF environments. It utilizes a 440201 ceramic/metal flange package to facilitate efficient heat dissipation. The product line emphasizes high reliability and consistent performance across wide frequency bands for critical communication and sensing infrastructure.

Replacement Considerations

No direct substitute part numbers are documented in the official datasheet.

CGH31240FCGH31240F
$537.28
Buy Now