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Product Detailed Parameters
- Description：RF MOSFET HEMT 28V 440166
- Series：GaN
- Mfr：MACOM Technology Solutions
- Package：Tray
- Technology：HEMT
- Frequency：3.3GHz ~ 3.9GHz
- Gain：11.5dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：120 mA
- Power - Output：30W
- Voltage - Rated：84 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：440166
- Supplier Device Package：440166
- Configuration：-
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Overview
The CGH35030F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high efficiency and wide bandwidth applications. It operates within the frequency range of 3.3 GHz to 3.9 GHz. The device supports a drain voltage of 28 V and delivers an output power of 30 W. Key electrical characteristics include a gain of 11.5 dB and a maximum drain current of 120 mA. The component is housed in a RoHS compliant 440166 package.
Feature Summary
- Utilizes Gallium Nitride (GaN) HEMT technology for enhanced performance
- Engineered for high efficiency and high gain operations
- Designed specifically for wide bandwidth RF applications
Applications
- High power RF amplification
- Military radar systems
- Electronic warfare equipment
- Test and measurement instrumentation
Procurement Notes
Verify that the specific ordering suffix matches the required configuration, as variations may exist within the product line. Ensure compatibility with the intended thermal management solution, given the power density. Confirm that the 440166 package footprint aligns with the PCB layout requirements. Check for any regional shipping restrictions or supply limitations before finalizing procurement plans.
Selection Notes
Select this component when a wide bandwidth covering 3.3 to 3.9 GHz is required alongside high output power capabilities. The GaN HEMT construction offers superior efficiency compared to traditional silicon-based alternatives. Consider the 28 V operating voltage and thermal dissipation needs associated with 30 W output. Evaluate the 11.5 dB gain requirement against system noise figure constraints.
Part Context
This part belongs to MACOM's portfolio of high-performance analog components supporting high-speed connectivity and communications. It complements other RF FETs and MOSFETs designed for demanding signal integrity requirements. The device fits within the broader category of microwave transistors used in advanced electronic systems requiring robust power handling.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal specifications if considering alternative GaN devices from other manufacturers.
