CGH35060P2

Overview

The CGH35060P2 is a gallium nitride (GaN) high-electron-mobility transistor (HEMT) designed for high efficiency, high gain, and wide bandwidth. It operates within the 3.1 to 3.5 GHz frequency range with a typical output power of 60 W. The device utilizes a 28 V supply voltage and features a pill package configuration. This component is engineered specifically for demanding RF applications requiring robust performance in broadband environments.

Feature Summary

• High-efficiency GaN HEMT technology
• High gain capability
• Wide bandwidth operation

Applications

• Telecommunications systems
• Industrial applications
• Defense and aerospace electronics

Procurement Notes

Verify the specific datasheet revision and package variant when sourcing. Ensure compatibility with thermal management requirements for 60 W operation. Confirm that the 28 V biasing aligns with system design constraints. Cross-reference official MACOM documentation for precise electrical characteristics and mechanical dimensions before integration.

Selection Notes

Select this component for applications requiring high power density in the 3.1–3.5 GHz band. Consider the pill package for mounting solutions. Evaluate thermal resistance and heat sinking needs due to high power dissipation. Compare against other GaN HEMTs if different frequency ranges or power levels are required.

Part Context

This part belongs to MACOM's CGH series of GaN HEMTs, which are optimized for broadband RF power amplification. The P2 suffix typically denotes a specific package or testing variant within the family. These devices support MACOM's focus on high-performance semiconductors for telecommunications and defense sectors.

Replacement Considerations

Consult official MACOM documentation for direct substitutes. Verify pinout compatibility and thermal specifications. Check frequency range overlap and power output ratings. Ensure equivalent gain and efficiency metrics match application requirements before substitution.