CGH40006P

Overview

The CGH40006P is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for RF and microwave applications. Operating from a 28 V rail, it provides broadband performance up to 6 GHz. Key electrical characteristics include a typical small signal gain of 13 dB at 2.0 GHz and 11 dB at 6.0 GHz. At a power input of 32 dBm, the device delivers a typical output power of 8 W with a drain efficiency of 53% to 65%. The transistor utilizes a solder-down pill package.

Feature Summary

• Unmatched GaN HEMT architecture providing high efficiency and wide bandwidth capabilities
• Suitable for linear and compressed amplifier circuits across various RF and microwave frequencies
• Large signal models available for ADS and MWO simulation environments

Applications

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A and AB amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms

Procurement Notes

Verify the specific datasheet revision and ordering information directly with MACOM Technology Solutions or authorized distributors before procurement. Confirm that the required application environment aligns with the absolute maximum ratings, particularly regarding case operating temperatures and thermal resistance limits. Ensure proper handling procedures are followed due to the sensitivity of the semiconductor components.

Selection Notes

Select the CGH40006P when designing general-purpose, broadband RF solutions requiring operation up to 6 GHz. It is specifically suited for applications demanding high gain and efficiency in both linear and compressed modes. Consider the 440109 solder-down pill package constraints during PCB layout and thermal management planning to ensure optimal performance and reliability within the specified voltage and current parameters.

Part Context

The CGH40006P belongs to MACOM's portfolio of GaN on SiC transistors engineered for next-generation RF power applications. This component serves as a core active element for developing high-performance amplifier stages. It is often evaluated alongside development tools like the CGH40006P-AMP test board to validate circuit designs prior to final integration into end-user systems.

Replacement Considerations

Consult official MACOM documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other GaN HEMTs without verifying pinout, electrical ratings, and package dimensions against the CGH40006P specifications.

FAQ

What is the maximum Drain-Source Voltage rating?

The absolute maximum Drain-Source Voltage (VDSS) rating is 120 V at a case temperature of 25°C.

Is the CGH40006P impedance matched?

No, the CGH40006P is an unmatched transistor designed to be integrated into custom amplifier circuits.

What package type does this component use?

The CGH40006P is available in a solder-down pill package, specifically identified as Package Type 440109.