CGH40010F

Overview

The CGH40010F is an unmatched gallium nitride (GaN) high-electron-mobility transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 28-volt rail, it delivers up to 6 GHz bandwidth with typical saturated power output of 13 W and drain efficiency of 65% at PSAT. The device features small signal gain of 16 dB at 2.0 GHz and 14 dB at 4.0 GHz. It utilizes the 440166 flange package and supports Class A, AB linear amplification suitable for complex waveforms.

Feature Summary

• Broadband operation extending from DC to 6 GHz
• High efficiency performance reaching 65% at saturated power
• Capable of supporting linear amplifier circuits for OFDM and CDMA waveforms
• Robust output mismatch stress tolerance up to 10:1 VSWR

Applications

• Cellular infrastructure base stations
• Broadband radio frequency amplifiers
• Test instrumentation equipment
• Two-way private radio systems

Procurement Notes

Verify the specific ordering suffix 'F' corresponds to the 440166 flange package configuration rather than the pill variant. Confirm RoHS compliance status and check for any recent Product Change Notices regarding assembly or material updates before finalizing procurement specifications.

Selection Notes

Select this component when designing general-purpose broadband amplifiers requiring high power density and wide operational bandwidth. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance and maximum operating temperature limits under continuous wave conditions.

Part Context

This device belongs to the MACOM CGH40010 family of GaN HEMTs. It shares core electrical characteristics with the CGH40010P but differs in physical packaging. The F designation specifically identifies the screw-down flange package style intended for robust mounting in high-power RF modules.

Replacement Considerations

CGH40010P