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The CGH40010P is a Gallium-Nitride (GaN) High-Electron-Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. It operates from a 28-volt rail and provides a broadband solution for RF and microwave applications. The device delivers an output power of 12.5W with a small signal gain of 14.5dB. It functions within a frequency range of 0Hz to 6GHz, supporting both linear and compressed amplifier circuits.
Verify the component status as not recommended for new designs due to potential minimum order quantity restrictions. Confirm package type compatibility, as the P suffix typically denotes a specific mounting style such as screw-down flange or solder-down pill. Ensure sourcing from authorized distributors to guarantee authenticity and check for recent Product Change Notifications regarding assembly or marking updates.
Select this component for applications requiring a general-purpose, broadband RF solution operating up to 6GHz. The device is suitable for Class A and AB linear amplifiers handling complex modulation waveforms. Consider the 28V operational requirement and the specific package constraints associated with the P suffix when designing the thermal management and mechanical layout.
This part belongs to the CGH40010 series of unmatched GaN HEMTs. It shares core electrical characteristics with variants like the CGH40010F but differs in physical packaging. The series is engineered to offer high gain and efficiency, making it a versatile choice for various RF and microwave circuit designs compared to lower-frequency or lower-power alternatives.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify if other packages within the same electrical family, such as the CGH40010F, meet mechanical requirements, noting that package changes may affect thermal and mounting specifications.