CGH40025P

Overview

The CGH40025P is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for RF and microwave applications. Operating from a 28 V rail, it delivers up to 6 GHz broadband performance with 15 dB small signal gain at 2.0 GHz and 13 dB at 4.0 GHz. The device provides 30 W typical saturated output power (PSAT) and achieves 62% drain efficiency at PSAT. It features a screw-down flange package (440196), supports Class A and AB linear amplification, and includes large-signal models for ADS and MWO.

Feature Summary

• Broadband operation extending up to 6 GHz
• High efficiency and high gain capabilities suitable for linear and compressed amplifier circuits
• Robust output mismatch stress tolerance of 10:1 VSWR without damage
• Large-signal models available for ADS and MWO design environments

Applications

• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

Procurement Notes

Verify the specific package type required for the application, as the CGH40025 series is available in both screw-down flange (CGH40025P) and solder-down pill (CGH40025F) configurations. Confirm that the selected component matches the intended mounting method and thermal management strategy. Ensure compatibility with the provided source and load impedance values for optimal performance at the target operating frequency.

Selection Notes

Select the CGH40025P when a screw-down flange package is preferred for mechanical stability and thermal dissipation. This variant is ideal for designs requiring robust mounting solutions in cellular infrastructure or test instrumentation. Consider the 28 V operating voltage and the need for appropriate gate biasing circuitry. Evaluate the trade-off between linearity and efficiency based on the specific waveform requirements such as OFDM or W-CDMA.

Part Context

The CGH40025P belongs to MACOM's general-purpose GaN HEMT portfolio, offering a balance of power, gain, and bandwidth. It is part of the CGH40025 family, which also includes the solder-down pill variant (CGH40025F). These devices are engineered to provide unmatched performance in RF and microwave applications, supporting both linear and compressed amplifier topologies across a wide frequency range.

Replacement Considerations

The CGH40025F serves as the direct functional equivalent within the same family, differing only in package type (solder-down pill vs. screw-down flange). When replacing the CGH40025P, ensure the new design accommodates the different mounting requirements and thermal characteristics associated with the alternative package.

FAQ

What is the maximum output mismatch stress the CGH40025P can withstand?

The device can withstand an output mismatch stress of 10:1 VSWR at all phase angles without damage when operating at 25 W CW.

Is the CGH40025P suitable for linear amplifier applications?

Yes, the transistor is ideal for linear amplifier circuits, including Class A and AB configurations suitable for complex waveforms like OFDM, W-CDMA, EDGE, and CDMA.

What simulation models are available for the CGH40025P?

Large-signal models are available for use in Keysight’s Advanced Design System (ADS) and Ansys AWR Microwave Office (MWO).