CGH40045F

CGH40045F

$206.80
  • Description:RF MOSFET HEMT 28V 440193
  • Series:GaN

SKU:39295a9fafca Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 28V 440193
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:HEMT
  • Frequency:0Hz ~ 4GHz
  • Gain:14dB
  • Voltage - Test:28 V
  • Current Rating (Amps):14A
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:55W
  • Voltage - Rated:84 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:440193
  • Supplier Device Package:440193
  • Configuration:-

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CGH40045F

Overview

The CGH40045F is a gallium nitride (GaN) high-electron mobility transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 28 V rail, it delivers up to 4 GHz operation with 16 dB small signal gain at 2.0 GHz and 12 dB at 4.0 GHz. The device provides 55 W typical saturated power output (PSAT) and achieves 55% efficiency at PSAT. It features a flange package (440193), supports large signal models for ADS and MWO, and withstands 10:1 output mismatch stress.

Feature Summary

  • High-efficiency GaN HEMT technology providing wide bandwidth capabilities
  • Robust construction supporting linear and compressed amplifier circuits
  • Flange package design optimized for thermal dissipation and stability

Applications

  • Cellular infrastructure amplifiers
  • Broadband amplifier designs
  • Class A, AB, and linear amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms
  • Test instrumentation systems

Procurement Notes

Verify the specific suffix 'F' corresponds to the required flange package type (440193). Confirm that the application environment remains within the specified maximum case operating temperature of +150 °C and junction temperature limits. Ensure proper grounding and thermal interface materials are utilized to maintain the rated thermal resistance of 2.8 °C/W.

Selection Notes

Select this component when designing general-purpose broadband RF solutions requiring high power density and efficiency. The device is suitable for both linear and compressed modes of operation. Designers should utilize the provided large signal models for simulation accuracy in ADS or MWO environments to optimize impedance matching networks.

Part Context

This part belongs to MACOM's portfolio of GaN on Silicon Carbide transistors. It serves as a general-purpose solution for various RF and microwave applications. The product line includes complementary pill packages and demonstration amplifier boards for rapid prototyping and performance validation.

Replacement Considerations

CGH40045P

FAQ

What is the maximum output mismatch stress the device can withstand?

The CGH40045F can withstand an output mismatch voltage standing wave ratio (VSWR) of up to 10:1 at all phase angles without damage.

Is the CGH40045F intended for medical or life-sustaining applications?

No, MACOM products are not intended for use in medical, lifesaving, or life-sustaining applications.

What package types are available for the CGH40045 series?

The CGH40045 series is available in two package types: the flange package (440193) for the CGH40045F and the pill package (440206) for the CGH40045P.

CGH40045FCGH40045F
$206.80
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