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The CGH40045F is a gallium nitride (GaN) high-electron mobility transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 28 V rail, it delivers up to 4 GHz operation with 16 dB small signal gain at 2.0 GHz and 12 dB at 4.0 GHz. The device provides 55 W typical saturated power output (PSAT) and achieves 55% efficiency at PSAT. It features a flange package (440193), supports large signal models for ADS and MWO, and withstands 10:1 output mismatch stress.
Verify the specific suffix 'F' corresponds to the required flange package type (440193). Confirm that the application environment remains within the specified maximum case operating temperature of +150 °C and junction temperature limits. Ensure proper grounding and thermal interface materials are utilized to maintain the rated thermal resistance of 2.8 °C/W.
Select this component when designing general-purpose broadband RF solutions requiring high power density and efficiency. The device is suitable for both linear and compressed modes of operation. Designers should utilize the provided large signal models for simulation accuracy in ADS or MWO environments to optimize impedance matching networks.
This part belongs to MACOM's portfolio of GaN on Silicon Carbide transistors. It serves as a general-purpose solution for various RF and microwave applications. The product line includes complementary pill packages and demonstration amplifier boards for rapid prototyping and performance validation.
CGH40045P
The CGH40045F can withstand an output mismatch voltage standing wave ratio (VSWR) of up to 10:1 at all phase angles without damage.
No, MACOM products are not intended for use in medical, lifesaving, or life-sustaining applications.
The CGH40045 series is available in two package types: the flange package (440193) for the CGH40045F and the pill package (440206) for the CGH40045P.