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The CGH60008D-GP5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die manufactured by MACOM Technology Solutions. It operates at frequencies up to 6.0 GHz and delivers an output power of 8W. The device features a test voltage of 28V, a rated voltage of 84V, and a test current of 100 mA. Packaged as a bare die in the GP5 format, it utilizes GaN technology for superior performance compared to silicon or gallium arsenide alternatives.
Verify the specific GP5 package designation and electrical parameters against the official MACOM datasheet before integration. Confirm RoHS compliance status and ensure compatibility with the intended RF circuit design requirements. Cross-reference the manufacturer part number to avoid confusion with similar variants.
Select this component for applications requiring high-frequency operation up to 6.0 GHz with moderate power output. Evaluate thermal management needs due to the bare die configuration. Ensure the design supports the specified 28V test voltage and 84V rated voltage limits for reliable operation.
This part belongs to the CGH60008 series of GaN HEMTs from MACOM. It shares core specifications with the CGH60008D-GP4 but differs in packaging or specific process variations. The series is designed for next-generation RF power transistors offering industry-leading gain and efficiency.
The CGH60008D-GP4 is a confirmed substitute within the same product family. Verify that the GP4 package matches the physical and electrical requirements of the original design before replacement.