CGH60030D-GP4

CGH60030D-GP4

$84.97
  • Description:RF MOSFET HEMT 28V DIE
  • Series:GaN

SKU:fa22c3990866 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 28V DIE
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:HEMT
  • Frequency:6GHz
  • Gain:15dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:30W
  • Voltage - Rated:84 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:Die
  • Supplier Device Package:Die
  • Configuration:-

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CGH60030D-GP4

Overview

The CGH60030D-GP4 is a Gallium Nitride High Electron Mobility Transistor (HEMT) die manufactured by MACOM Technology Solutions. It operates from DC to 6 GHz with a rated drain voltage of 28 V and a breakdown voltage of 84 V. The device delivers an output power of 30 W and provides a gain of 15 dB at the specified test conditions. It is designed for high-efficiency RF applications requiring robust performance in a bare die package format.

Feature Summary

  • Utilizes GaN HEMT technology for high efficiency and wide bandwidth operation
  • Engineered as a bare die component for flexible integration into custom modules
  • Provides high output power density suitable for demanding RF environments

Applications

  • Military communication systems
  • Electronic warfare equipment
  • Test and measurement instrumentation

Procurement Notes

Verify that the specific ordering suffix matches the required product variant, as suffixes may indicate differences in marking or packaging standards. Confirm RoHS compliance status and check for any design life limitations. Ensure procurement channels are authorized to guarantee authenticity. Review the latest Product Change Notification (PCN) for any updates to specifications or manufacturing processes before placing orders.

Selection Notes

Select this component when a bare die GaN HEMT solution is required for frequencies up to 6 GHz. Consider the 28 V operating voltage and 30 W output capability against system power requirements. Evaluate thermal management strategies suitable for die-level mounting. Verify compatibility with existing substrate materials and interconnect methods for the target application design.

Part Context

This part belongs to the CGH60030 series of GaN HEMTs from MACOM. It represents a high-power discrete semiconductor device intended for integration into larger RF assemblies rather than standalone packaged components. The designation indicates specific electrical characteristics distinct from other variants in the family.

Replacement Considerations

  • CGH60030D-GP5

FAQ

What is the maximum operating frequency of the CGH60030D-GP4?

The device is designed to operate from DC up to 6 GHz.

Is this component available in a packaged form?

No, the CGH60030D-GP4 is supplied as a bare die for integration into custom modules.

CGH60030D-GP4CGH60030D-GP4
$84.97
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