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The CGH60030D-GP4 is a Gallium Nitride High Electron Mobility Transistor (HEMT) die manufactured by MACOM Technology Solutions. It operates from DC to 6 GHz with a rated drain voltage of 28 V and a breakdown voltage of 84 V. The device delivers an output power of 30 W and provides a gain of 15 dB at the specified test conditions. It is designed for high-efficiency RF applications requiring robust performance in a bare die package format.
Verify that the specific ordering suffix matches the required product variant, as suffixes may indicate differences in marking or packaging standards. Confirm RoHS compliance status and check for any design life limitations. Ensure procurement channels are authorized to guarantee authenticity. Review the latest Product Change Notification (PCN) for any updates to specifications or manufacturing processes before placing orders.
Select this component when a bare die GaN HEMT solution is required for frequencies up to 6 GHz. Consider the 28 V operating voltage and 30 W output capability against system power requirements. Evaluate thermal management strategies suitable for die-level mounting. Verify compatibility with existing substrate materials and interconnect methods for the target application design.
This part belongs to the CGH60030 series of GaN HEMTs from MACOM. It represents a high-power discrete semiconductor device intended for integration into larger RF assemblies rather than standalone packaged components. The designation indicates specific electrical characteristics distinct from other variants in the family.
The device is designed to operate from DC up to 6 GHz.
No, the CGH60030D-GP4 is supplied as a bare die for integration into custom modules.