CGH60030D-GP5

Overview

The CGH60030D-GP5 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) RF power die manufactured by MACOM Technology Solutions. It operates within a frequency range of DC to 6 GHz and delivers an output power of 30 Watts. The device is rated for a drain voltage of 28 Volts with a maximum rating of 84 Volts, supporting a test current of 250 mA. It provides a gain of 15 dB and utilizes a bare die package configuration.

Feature Summary

• Utilizes GaN HEMT technology for high-power RF performance
• Operates across a wide frequency band from DC to 6 GHz
• Designed as a bare die component for custom integration

Applications

• RF power amplification in wireless communication systems
• Military and aerospace radar applications
• Test and measurement equipment signal generation

Procurement Notes

Verify the specific suffix GP5 against official MACOM documentation to confirm exact electrical characteristics and pinout compatibility. Ensure that the bare die form factor aligns with your substrate mounting capabilities and thermal management requirements before procurement.

Selection Notes

Select this component when a high-power GaN solution is required up to 6 GHz. Consider the 28V operating voltage and 30W output capability relative to system power constraints. Confirm that the bare die package type is suitable for your assembly process compared to packaged alternatives.

Part Context

This part belongs to the CGH60030 series of GaN HEMT devices from MACOM. These components are engineered for robust RF power applications requiring high efficiency and wide bandwidth. The GP5 suffix denotes a specific manufacturing lot or revision within the broader CGH60030 product family.

Replacement Considerations

Public confirmed substitute part numbers: CGH60030D-GP4, CGH60030D.