CGHV14250F

Overview

The CGHV14250F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for L-Band radar amplifier applications. It operates from DC to 1.6 GHz with a typical output power of 330 W and a power gain of 18 dB. The device features a drain efficiency of 77% and a pulsed amplitude droop of less than 0.3 dB. It utilizes the 440162 ceramic/metal flange package, supports an FET tuning range from UHF through 1800 MHz, and includes internal pre-matching on the input port.

Feature Summary

• High efficiency and wide bandwidth capabilities optimized for L-Band radar systems
• Internally pre-matched input port with unmatched output configuration
• Low pulsed amplitude droop ensuring stable signal performance
• Large signal models available for ADS and MWO simulation environments

Applications

• L-Band radar amplifier applications
• Band-specific applications ranging from 0.9 through 1.8 GHz
• Electronic warfare transmitters
• Satellite communication systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm the package type. The 'F' suffix designates the ceramic/metal flange package (440162), while other suffixes may indicate different physical configurations. Ensure that the procurement documentation explicitly references the correct part number variant to avoid receiving mismatched hardware.

Selection Notes

Select this component when designing amplifiers requiring high output power and broad bandwidth in the L-Band spectrum. The device is specifically engineered for high efficiency and gain, making it suitable for demanding radar transmitter architectures. Consider the thermal management requirements associated with the flange package and verify compatibility with the intended biasing conditions.

Part Context

This component belongs to MACOM's GaN HEMT portfolio, which focuses on high-power RF solutions. The CGHV14250 series is tailored for robust performance in challenging electromagnetic environments. The product line emphasizes reliability and consistent electrical characteristics across varying operational temperatures and duty cycles.

Replacement Considerations

Consult the official datasheet for cross-reference information. Verify that any substitute device matches the critical parameters of output power, frequency range, and package dimensions to ensure mechanical and electrical compatibility within the existing circuit design.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

Does the device require external matching networks?

The input port is internally pre-matched, but the output port remains unmatched, requiring external network design.

What is the typical drain efficiency at 1.4 GHz?

The typical drain efficiency is 76% at 1.4 GHz under specified pulsed conditions.