CGHV14800F

Overview

The CGHV14800F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for L-Band radar systems. It operates within the 960 MHz to 1400 MHz frequency range and utilizes a ceramic/metal flange package (Type 440117). The device typically delivers over 800 W of output power at 50 V drain-source voltage, achieving greater than 65% drain efficiency. Key electrical characteristics include a maximum drain-source breakdown voltage of 150 V, a gate threshold voltage ranging from -3.8 V to -2.3 V, and a saturated drain current of up to 123.5 A. The component supports pulsed operation with a maximum duty cycle of 5% and a pulse width of 100 µs.

Feature Summary

• High efficiency and wide bandwidth capabilities optimized for pulsed amplifier applications
• Internally matched input and output ports for simplified circuit integration
• Low pulsed amplitude droop ensuring signal stability during operation
• Robust construction in a ceramic/metal flange package suitable for harsh environments

Applications

• Air traffic control (ATC) radar systems
• Weather radar amplifiers
• Penetration radars
• Antimissile system radars
• Long-range surveillance radars

Procurement Notes

Verify that the specific order corresponds to the CGHV14800F part number, which denotes the standalone GaN HEMT component. Distinguish this from the CGHV14800F-AMP, which is a separate test board product containing the installed transistor. Confirm package type 440117 matches design requirements. Ensure all procurement documentation references the correct MACOM Technology Solutions Inc. datasheet revision to avoid discrepancies in absolute maximum ratings or thermal parameters.

Selection Notes

Select the CGHV14800F when designing L-Band radar amplifiers requiring high output power exceeding 800 W and efficient operation between 960 MHz and 1400 MHz. The internal matching simplifies impedance networks compared to unmatched variants. Consider the 50 V operating voltage and 5% maximum duty cycle constraints for thermal management. Evaluate the ceramic/metal flange package for mounting compatibility and heat dissipation needs in pulsed transmitter architectures.

Part Context

This component belongs to MACOM's CGHV series of Gallium Nitride High Voltage transistors. These devices are engineered specifically for high-power RF applications demanding superior gain and efficiency. The CGHV14800F represents a high-power variant tailored for the L-Band spectrum, distinguishing itself from lower-power or higher-frequency models within the broader portfolio through its specific power output and frequency coverage specifications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.