CGHV1F006S

Overview

The CGHV1F006S is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high efficiency, gain, and wide bandwidth. It operates from DC to 15 GHz with an 8 W typical output power. The device supports a 40 V drain-source voltage and features a 3mm x 4mm dual-flat-no-lead (DFN) surface mount package. It maintains performance at reduced voltages down to 20 V.

Feature Summary

• Supports operation across L, S, C, X, and Ku-Band frequencies up to 15 GHz
• Delivers high gain and efficiency in a compact 3mm x 4mm DFN package
• Capable of maintaining performance under reduced power supply conditions down to 20 V

Applications

• L, S, C, X, and Ku-Band amplifier applications
• C-Band amplifiers operating between 5.5 GHz and 7.2 GHz
• X-Band SATCOM systems operating between 7.9 GHz and 8.4 GHz
• X-Band radar systems operating between 8.5 GHz and 9.6 GHz
• 802.11 wireless communication systems operating between 4.9 GHz and 5.9 GHz

Procurement Notes

Verify the specific application circuit requirements against the datasheet specifications before procurement. Confirm that the thermal management design accommodates the junction-to-case thermal resistance and maximum case temperature limits. Ensure the selected packaging handles static discharge according to the Human Body Model and Charge Device Model classifications provided in the documentation.

Selection Notes

Select this component when designing broadband RF amplifiers requiring high power density and wide frequency coverage. Consider the 40 V rating for standard high-power configurations or the 20 V capability for lower voltage applications. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation within the specified operating junction temperature range.

Part Context

This part belongs to MACOM's GaN on Silicon Carbide (GaN/SiC) HEMT family. It utilizes a surface-mount DFN package suitable for automated assembly. The device is engineered to provide industry-leading gain and efficiency for modern communication and radar systems.

Replacement Considerations

CGHV1F006S-AMP1, CGHV1F006S-AMP2, CGHV1F006S-AMP3, CGHV1F006S-AMP4

FAQ

What is the maximum operating frequency of the CGHV1F006S?

The device supports operation up to 15 GHz.

Can the CGHV1F006S operate below its nominal 40 V supply?

Yes, the transistor can operate below 40 V down to as low as 20 V while maintaining high gain and efficiency.

What package type does the CGHV1F006S use?

It uses a 3mm x 4mm surface mount dual-flat-no-lead (DFN) package.