CGHV1J025D-GP4

$153.27

Description：RF MOSFET HEMT 40V DIE
Series：GaN

SKU:e649a8376b10 Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET HEMT 40V DIE
Series：GaN
Mfr：MACOM Technology Solutions
Package：Tray
Technology：HEMT
Frequency：18GHz
Gain：17dB
Voltage - Test：40 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：120 mA
Power - Output：25W
Voltage - Rated：100 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：Die
Supplier Device Package：Die
Configuration：-

Download product information

CGHV1J025D-GP4

Overview

The CGHV1J025D is a high-voltage GaN HEMT die on a silicon carbide substrate, utilizing a 0.25μm gate length process. It operates from 10 GHz to 18 GHz at 40 V with a breakdown voltage of 100 V. Key electrical characteristics include a typical small signal gain of 17 dB and a power-added efficiency (PAE) of 60% at 10 GHz. The device delivers a typical saturated output power (PSAT) of 25 W. Absolute maximum ratings specify a drain-source voltage of 120 VDC and an operating junction temperature up to 225°C.

Feature Summary

High-efficiency operation enabled by GaN-on-SiC technology
Capable of delivering 25 W saturated output power
Designed for high-frequency applications up to 18 GHz
Features high breakdown voltage for robust performance

Applications

Satellite Communications
Point-to-Point (PTP) Communications Links
Marine Radar Systems
Pleasure Craft Radar
Port Vessel Traffic Services

Procurement Notes

Verify the specific revision level against the manufacturer's latest documentation before finalizing designs. Confirm that the bare die packaging in Gel-Pak containers meets your handling requirements. Ensure compatibility with recommended AuSn soldering processes and vacuum collet pick-up methods during assembly. Validate thermal resistance parameters relative to your specific carrier mounting conditions.

Selection Notes

Select this component for designs requiring high power density and efficiency in the Ku-band spectrum. The bare die format necessitates custom RF layout and wire bonding integration. Evaluate the 120 V absolute maximum rating against system transient voltages. Consider the 3.91 °C/W thermal resistance when designing the heat dissipation path for the silicon carbide substrate.

Part Context

This part belongs to MACOM's CGHV series of high-voltage GaN HEMTs. It utilizes a 0.25μm gate length fabrication process on a silicon carbide substrate. The product line targets broadband amplifier applications requiring high power output and efficiency in microwave frequency ranges.