CGHV1J070D-GP4

Overview

The CGHV1J070D is a high-voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die on a silicon carbide substrate, utilizing a 0.25 μm gate length process. It operates from 10 MHz to 18 GHz at 40 V with a drain-source breakdown voltage of 120 V and a typical saturated power output of 70 W. The device provides a small signal gain of 17 dB at 10 GHz and a power-added efficiency of 60% at the same frequency. Key electrical parameters include a gate threshold voltage of -3.8 V, maximum drain current of 6.0 A, and an operating junction temperature up to 225°C.

Feature Summary

• High-frequency operation capability up to 18 GHz
• Superior high-efficiency performance characteristics
• High breakdown voltage for robust operation
• Large signal models available for ADS and MWO

Applications

• Satellite Communications
• Point-to-Point Communications Links
• Marine Radar
• Pleasure Craft Radar
• Port Vessel Traffic Services

Procurement Notes

Verify the specific revision status of the datasheet before finalizing design integration, as MACOM reserves the right to modify product information without notice. Confirm that the bare die packaging in Gel-Pak containers meets your handling requirements. Ensure that large-signal models are obtained directly from the manufacturer for accurate simulation. Validate all absolute maximum ratings against your intended operating conditions to prevent device damage.

Selection Notes

Select this component when designing amplifiers requiring high power density and efficiency in the Ku-band spectrum. The GaN-on-SiC technology offers higher thermal conductivity compared to other substrates. Consider the bare die format if custom MMIC designs or asymmetric power combining architectures are utilized. Verify that the assembly process supports thermosonic bonding and eutectic die attachment methods specified in the documentation.

Part Context

This part belongs to MACOM's portfolio of high-performance analog ICs supporting high-speed connectivity and RF applications. It utilizes GaN-on-SiC technology, which provides superior performance over traditional GaAs technologies in terms of power density and bandwidth. The device is designed for commercial and aerospace markets requiring reliable microwave components.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the official documentation. Designers should consult MACOM directly for potential alternatives or updated versions within the CGHV series.