SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CGHV27015S is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high efficiency, gain, and wide bandwidth. It operates from DC to 6.0 GHz in a 3 mm x 4 mm dual-flat-no-lead (DFN) surface-mount package. At a drain voltage of 50 V, the device delivers 2.5 W average power or 15 W peak power. At 28 V, it provides 1 W average power and 7 W peak power. The component features a drain-source breakdown voltage of 125 V and an operating junction temperature up to 225°C.
Verify the specific ordering suffix against official MACOM documentation to ensure correct packaging configuration. Confirm that the application circuit design accounts for the specified thermal resistance and moisture sensitivity level requirements. Ensure compliance with RoHS3 standards and appropriate handling procedures for ESD-sensitive components during assembly.
Select this component for designs requiring high linearity and power density within the L-Band through C-Band spectrum. Evaluate thermal management strategies carefully, as the device supports high junction temperatures but requires effective heat dissipation via the exposed pad. Consider the availability of large signal models for ADS and MWO during the simulation phase to optimize matching networks.
This part belongs to the CGHV series of GaN HEMTs manufactured by MACOM Technology Solutions. These transistors are engineered for high-voltage RF power applications, offering superior power density compared to traditional technologies. The CGHV27015S specifically targets mid-power amplifier stages where wide bandwidth and high efficiency are critical performance metrics.
Consult MACOM's official substitution matrix for verified alternatives. No direct substitute part numbers are confirmed in the provided datasheet.