CGHV27060MP

Overview

The CGHV27060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT) designed for communication amplifiers and pulse radar applications. It operates from DC to 2.7 GHz with no internal matching, offering broadband flexibility. The device features a plastic SMT package measuring 4.4 mm x 6.5 mm. Key electrical parameters include a drain-source voltage of 150 V, a maximum forward gate current of 10.4 mA, and a saturated drain current of 9.7 A. At 2.5 GHz under pulsed conditions, it delivers approximately 83-94 W output power with 64-69% drain efficiency.

Feature Summary

• Broadband operation without internal input or output matching networks
• Suitable for high-efficiency topologies including Class A/B, F, and Doherty amplifiers
• Optimized for pulsed applications at UHF, L-Band, and low S-Band frequencies
• Supports high degrees of digital pre-distortion correction

Applications

• Communication amplifiers in the 10 to 15 W average power class
• Pulsed radar systems operating at UHF, L-Band, or low S-Band
• Demonstration amplifier circuits such as CGHV27060MP-AMP1, AMP3, and AMP4

Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to ensure correct configuration. Confirm that the component meets RoHS compliance standards prior to integration. Check for any recent Product Change Notifications regarding design or material updates. Ensure proper handling procedures are followed due to moisture sensitivity level classification. Validate thermal management requirements based on the intended operating mode.

Selection Notes

Select this component for designs requiring high output power up to 60 W across a wide frequency range extending to 2.7 GHz. Consider the absence of internal matching when designing external impedance networks. Evaluate thermal resistance characteristics for both continuous wave and pulsed duty cycles. Ensure the application circuit can support the required drain voltage and quiescent current settings for optimal performance.

Part Context

This device belongs to the CGHV series of GaN HEMTs manufactured by MACOM Technology Solutions. It is specifically engineered for high-power RF applications where broadband performance and high efficiency are critical. The MP package designation indicates a small plastic surface-mount form factor suitable for automated assembly processes.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Do not assume functional equivalence with other models in the family without explicit datasheet confirmation. Verify pinout compatibility and thermal interface requirements before substitution.