CGHV31500F1

Overview

The CGHV31500F1 is a packaged GaN HEMT amplifier operating from 2.7 to 3.1 GHz, utilizing a 50 V, 0.4 µm process on SiC. It delivers 500 W saturated output power with 11 dB large signal gain and 60% drain efficiency under long pulse conditions (2 msec pulse width, 20% duty cycle). The device features internal 50 Ω matching at both input and output ports. Absolute maximum ratings include a 150 V drain-source voltage, -10/+2 V gate voltage, and 24 A drain current. Operating temperature ranges from -40°C to +85°C.

Feature Summary

• Internally matched to 50 ohms at both input and output ports for simplified integration
• Capable of high-power operation with 500 W saturated output power
• Designed for superior performance during long pulse operations
• Constructed using a thermally enhanced flange package

Applications

• General amplification
• S-band radar systems

Procurement Notes

Verify the specific revision status against the latest MACOM datasheet before finalizing designs. Confirm that the application environment supports the required thermal management for the flange package. Ensure biasing sequences strictly follow the manufacturer's guidelines to prevent damage. Check for any export control restrictions applicable to this component in your region.

Selection Notes

Select this component for S-band applications requiring high power density and efficiency. The internal matching simplifies circuit design by eliminating external matching networks. Consider the thermal resistance characteristics when designing heat sinks. Verify that the pulsed operation parameters align with the system's duty cycle requirements to maintain junction temperature limits.

Part Context

This part belongs to MACOM's CGHV series of GaN on SiC amplifiers. These devices are engineered for defense and commercial S-band radar applications. The series emphasizes high gain and efficiency in a robust, thermally enhanced package suitable for demanding RF environments.

Replacement Considerations

Consult MACOM documentation for direct replacements. No alternative part numbers are confirmed in the provided source material.