CGHV35060MP-AMP1

Overview

The CGHV35060MP-AMP1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S-Band performance. It operates within the 2.7 GHz to 3.8 GHz frequency range, delivering an output power of 60 W with a gain of 14.5 dB. The device features a drain-source breakdown voltage of 150 V and supports continuous drain current up to 10.4 A. It is designed for surface-mount installation and functions reliably between -40°C and +107°C.

Feature Summary

• Input-matched design for optimal gain and power efficiency in S-Band applications
• High-power GaN HEMT technology for robust RF performance
• Wide operating temperature range suitable for demanding environments

Applications

• S-Band radar systems
• Military communication transmitters
• Base station power amplifiers

Procurement Notes

Verify export compliance requirements before ordering, as this product may require additional documentation for shipment from the United States. Confirm that the AMP1 suffix corresponds to the specific application module or package variant intended for your design, ensuring compatibility with existing schematic and layout constraints.

Selection Notes

Select this component when S-Band operation between 2.7 GHz and 3.8 GHz is required with high linearity and power output. The input-matched configuration simplifies circuit design by reducing external matching network complexity. Ensure thermal management solutions support the specified power dissipation and operating temperature limits.

Part Context

This part belongs to MACOM's CGHV series of GaN HEMTs, which are engineered for high-power RF applications. The CGHV35060MP serves as the base transistor, while the AMP1 designation typically indicates a packaged or matched version tailored for specific amplifier modules. This series emphasizes reliability and performance in defense and aerospace sectors.

Replacement Considerations

Public confirmed substitute part numbers: None identified.