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Product Detailed Parameters
- Description：RF MOSFET HEMT 45V 440210
- Series：GaN
- Mfr：MACOM Technology Solutions
- Package：Tray
- Technology：HEMT
- Frequency：2.9GHz ~ 3.5GHz
- Gain：11dB
- Voltage - Test：45 V
- Current Rating (Amps)：24A
- Noise Figure：-
- Current - Test：500 mA
- Power - Output：455W
- Voltage - Rated：125 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：440210
- Supplier Device Package：440210
- Configuration：-
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Overview
The CGHV35400F is a gallium nitride (GaN) amplifier designed for S-Band radar systems, operating from 2.9 to 3.5 GHz. It delivers 500 W typical output power with 11 dB gain and 70% drain efficiency. The device features 50-ohm internal matching on both input and output ports. It utilizes a 50 V, 0.4 μm GaN-on-SiC process and is housed in a ceramic/metal flange package type 440225.
Feature Summary
- Internally matched to 50 ohms at both input and output ports
- High power density GaN-on-Silicon Carbide construction
- Low pulsed amplitude droop of less than 0.3 dB
Applications
- S-Band radar amplifier applications
- Pulsed RF power amplification
- Broadband high-efficiency signal generation
Procurement Notes
Verify the specific datasheet revision against the manufacturing date code to ensure alignment with current electrical characteristics. Confirm that the application circuit matches the required pulse width and duty cycle parameters specified in the absolute maximum ratings section before finalizing procurement specifications.
Selection Notes
Select this component when designing S-Band radar systems requiring high output power and wide bandwidth capabilities. Ensure the thermal management solution supports the case operating temperature range and that the drive stage provides the necessary input power level for optimal efficiency performance.
Part Context
This part belongs to MACOM's CGHV series of high-voltage GaN transistors built on silicon carbide substrates. The series targets high-power microwave applications where high efficiency and ruggedness are critical requirements for reliable operation in demanding environments.
Replacement Considerations
CGHV35400F-AMP
FAQ
What is the maximum allowable gate-to-source voltage?
The absolute maximum rating for gate-to-source voltage is -10 volts to +2 volts.
Is the device suitable for continuous wave operation?
No, the device is rated for pulsed operation with a maximum duty cycle of 10% and a pulse width of 500 microseconds.
What package type does the CGHV35400F utilize?
The amplifier is supplied in a ceramic/metal flange package, specifically type 440225.
