CGHV35400F1

Overview

The CGHV35400F1 is a gallium nitride (GaN) amplifier designed for the 2.9 to 3.5 GHz S-band radar frequency range. It delivers a minimum output power of 400 W with a large signal gain of 13 dB and a drain efficiency of 65%. The device features internal 50-ohm matching on both input and output ports, facilitating integration into RF systems. Constructed using a 50 V, 0.4 µm GaN-on-SiC process, it supports high temperature operation and long pulse capabilities. The component is housed in a ceramic/metal flange package type 440226.

Feature Summary

• Internally matched to 50 ohms at both input and output ports
• High power density GaN-on-SiC manufacturing process
• Designed for high efficiency and high gain applications
• Capable of long pulse operation for modern radar architectures

Applications

• Civil pulsed radar amplifiers
• Military pulsed radar amplifiers

Procurement Notes

Verify the specific revision status against the latest MACOM datasheet before procurement, as product information may be updated without notice. Confirm that the required thermal management solutions are compatible with the 440226 ceramic/metal flange package dimensions. Ensure strict adherence to electrostatic discharge handling procedures due to the HBM Class 3A sensitivity of the device.

Selection Notes

Select this component when designing S-band radar systems requiring high output power and efficiency within the 2.9 to 3.5 GHz band. The internal 50-ohm matching simplifies circuit design by eliminating external matching networks. Consider the thermal resistance and junction temperature limits when planning heat dissipation strategies for continuous or long-pulse duty cycles.

Part Context

This part belongs to MACOM's portfolio of GaN-on-SiC radio frequency power transistors and amplifiers. These devices utilize advanced semiconductor processes to achieve superior performance metrics compared to traditional silicon-based technologies. The CGHV35400F1 specifically targets high-power radar applications where reliability and efficiency under demanding operating conditions are critical requirements.

Replacement Considerations

Consult official MACOM documentation for qualified replacement parts or alternative packages. Verify compatibility with existing board layouts and thermal interfaces if substituting with other variants from the same product family.

FAQ

What is the maximum forward gate current rating?

The absolute maximum rating for forward gate current at 25°C is 80 mA.

How must the flange be connected?

The flange on the package bottom must be connected to RF, DC, and thermal ground.

What is the typical small-signal gain?

The typical small-signal gain (S21) is 13.7 dB when measured at a pin of -20 dBm.