CGHV37400F

Overview

The CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for S-band radar amplifier applications. It operates within the 3.5 to 3.7 GHz frequency range and delivers 400 W of output power with 11.5 dB gain and 55% drain efficiency. The device utilizes a 50 V, 0.4 μm GaN-on-Silicon Carbide (SiC) process and features 50-ohm input and output matching. It is housed in a ceramic metal flange package, type 440217.

Feature Summary

• High efficiency and wide bandwidth capabilities optimized for S-band radar systems
• Internally matched to 50 ohms on both input and output ports
• Low pulsed amplitude droop performance under specified operating conditions

Applications

• Pulse and continuous wave S-band radar systems
• Military radar amplifier applications
• Civilian radar amplifier applications

Procurement Notes

Verify the specific revision status of the datasheet before procurement, as MACOM reserves the right to modify product information without notice. Confirm that the ordering suffix matches the required configuration, noting that the -AMP designation indicates an evaluation board rather than the standalone transistor component.

Selection Notes

Select this component for designs requiring high power density and wide bandwidth in the S-band spectrum. Ensure the application circuit supports the specified 100 μs pulse width and 10% duty cycle to achieve rated performance metrics. Verify thermal management capabilities to maintain the case operating temperature within the specified limits during operation.

Part Context

This part belongs to the CGHV series of GaN-on-SiC transistors from MACOM Technology Solutions. These devices are engineered for high-power RF applications, leveraging advanced foundry processes to deliver superior gain and efficiency compared to traditional technologies. The CGHV37400F specifically targets the 3.5 to 3.7 GHz band.

Replacement Considerations

Public confirmed substitute part numbers: None identified.