CGHV40030F

Overview

The CGHV40030F is an unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high efficiency, gain, and wide bandwidth. It operates on a 50 V rail within a 2-lead flange package (Type 440166). The device supports DC to 6 GHz operation with typical output power of 30 W and drain efficiency up to 70% at saturation. Absolute maximum ratings include a drain-source voltage of 150 V, operating junction temperature up to 225°C, and case temperature range from -40°C to +85°C.

Feature Summary

• Unmatched GaN HEMT technology optimized for high efficiency and wide bandwidth applications
• Capable of operation across the L-, S-, and C-Band frequency ranges
• Designed for deployment in high gain amplifier configurations

Applications

• L-band amplifier applications
• S-band amplifier applications
• C-band amplifier applications

Procurement Notes

Verify the specific package type required for the application, as the CGHV40030 is available in both Flanged (CGHV40030F) and Pill (CGHV40030P) variants. Confirm that the design accommodates the specified thermal management requirements, including the maximum junction temperature of 225°C and case operating limits. Ensure sourcing channels provide the correct datasheet revision and ordering information directly from MACOM Technology Solutions or authorized distributors.

Selection Notes

Select this component for designs requiring high power density and broad bandwidth coverage from DC to 6 GHz. The device is suitable for systems utilizing a 50 V supply rail. Consider the thermal resistance of 5.9°C/W when designing heat sinks. Evaluate the need for large signal models compatible with ADS and MWO for simulation accuracy during the development phase.

Part Context

This part belongs to the CGHV series of Gallium Nitride High Voltage transistors manufactured by MACOM Technology Solutions. These devices are engineered for robust performance in demanding RF environments. The CGHV40030 specifically targets applications needing significant output power within a compact footprint, leveraging advanced GaN-on-SiC material properties for superior thermal and electrical characteristics compared to traditional silicon technologies.

Replacement Considerations

Public confirmed substitute part numbers: None identified.