CGHV40030P

Overview

The CGHV40030P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high efficiency, gain, and wide bandwidth. It operates on a 50 V rail with up to 6 GHz frequency range. Typical output power is 30 W at saturation, achieving 70% drain efficiency. The device features approximately 16 dB gain and is housed in a 2-lead flange package (Type 440196).

Feature Summary

• Unmatched GaN HEMT architecture optimized for high efficiency and wide bandwidth.
• Capable of operation across L-, S-, and C-Band amplifier applications.
• Designed specifically for high gain performance within the specified frequency range.

Applications

• L-Band amplifier designs
• S-Band amplifier designs
• C-Band amplifier designs

Procurement Notes

Verify the specific package type required for your design, as the model suffix indicates the physical form factor. Confirm that the application circuit matches the intended operating frequency band, as datasheet specifications are based on specific test boards. Ensure thermal management aligns with the junction-to-case resistance ratings provided in the absolute maximum ratings section.

Selection Notes

Select this component when designing amplifiers requiring high power density and broad bandwidth coverage from DC to 6 GHz. The 50 V operation voltage suits standard RF power supply rails. Consider the flange package for efficient heat dissipation in high-power continuous wave applications. Verify impedance matching networks against the provided source and load impedance data for optimal performance.

Part Context

This part belongs to MACOM's CGHV series of Gallium Nitride High Electron Mobility Transistors. These devices utilize silicon carbide substrates to deliver superior power handling and thermal conductivity compared to traditional semiconductor technologies. The series targets demanding RF power amplifier applications requiring robust performance and reliability.

Replacement Considerations

CGHV40030F: Identical electrical characteristics but utilizes a pill package instead of the flange configuration. Both variants share the same die and performance metrics, allowing for substitution if mechanical mounting constraints differ between the two package types.

FAQ

What is the maximum operating frequency of the CGHV40030P?

The device supports operation up to 6 GHz.

What is the typical drain efficiency at saturated output power?

The datasheet specifies a typical drain efficiency of 70% at PSAT.

Does the P suffix indicate a change in electrical function?

No, the P suffix denotes the 2-lead flange package type (440196). The electrical performance remains identical to the F variant.