CGHV40050P

CGHV40050P

$193.15
  • Description:RF MOSFET HEMT 50V 440206
  • Series:GaN

SKU:ae107b66461b Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V 440206
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:HEMT
  • Frequency:4GHz
  • Gain:19dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:50W
  • Voltage - Rated:150 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:440206
  • Supplier Device Package:440206
  • Configuration:-

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CGHV40050P

Overview

The MACOM CGHV40050P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for RF and microwave applications up to 4 GHz. Operating from a 50 V rail, it delivers up to 77 W typical output power with 17.5 dB small signal gain at 1.8 GHz. The device features 53% drain efficiency at saturation and supports broadband operation across UHF, L, and S bands.

Feature Summary

  • High-power GaN HEMT technology optimized for broadband RF performance
  • Capable of delivering up to 77 W saturated output power
  • Operates efficiently on a standard 50 V supply rail
  • Provides stable gain and wide bandwidth coverage up to 4 GHz

Applications

  • Broadband amplifiers covering UHF, L, and S bands
  • Multi-octave bandwidth amplifier designs up to 4 GHz
  • Demonstration amplifier circuits for high-efficiency testing

Procurement Notes

Verify the specific package type required for your design, as the CGHV40050P utilizes the 440206 pill package distinct from the flange-mounted CGHV40050F variant. Confirm that thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet to ensure reliable operation within the maximum case temperature limits.

Selection Notes

Select this component when designing systems requiring high linearity and power density in the sub-4 GHz range. The 50 V operating voltage simplifies biasing requirements compared to higher voltage alternatives. Ensure impedance matching networks are designed around the provided source and load impedances to maximize power transfer and stability across the target frequency band.

Part Context

This part belongs to the CGHV40050 family of GaN HEMTs manufactured by Wolfspeed (formerly Cree). It represents a general-purpose solution for RF engineers needing robust performance in compact form factors. The P suffix specifically denotes the 440206 pill package configuration, distinguishing it from other mechanical variants in the same electrical family.

Replacement Considerations

CGHV40050F serves as the primary alternative within the same product family, offering identical electrical specifications but utilizing the 440193 flange package instead of the pill format.

CGHV40050PCGHV40050P
$193.15
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