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The MACOM CGHV40050P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for RF and microwave applications up to 4 GHz. Operating from a 50 V rail, it delivers up to 77 W typical output power with 17.5 dB small signal gain at 1.8 GHz. The device features 53% drain efficiency at saturation and supports broadband operation across UHF, L, and S bands.
Verify the specific package type required for your design, as the CGHV40050P utilizes the 440206 pill package distinct from the flange-mounted CGHV40050F variant. Confirm that thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet to ensure reliable operation within the maximum case temperature limits.
Select this component when designing systems requiring high linearity and power density in the sub-4 GHz range. The 50 V operating voltage simplifies biasing requirements compared to higher voltage alternatives. Ensure impedance matching networks are designed around the provided source and load impedances to maximize power transfer and stability across the target frequency band.
This part belongs to the CGHV40050 family of GaN HEMTs manufactured by Wolfspeed (formerly Cree). It represents a general-purpose solution for RF engineers needing robust performance in compact form factors. The P suffix specifically denotes the 440206 pill package configuration, distinguishing it from other mechanical variants in the same electrical family.
CGHV40050F serves as the primary alternative within the same product family, offering identical electrical specifications but utilizing the 440193 flange package instead of the pill format.