CGHV40100F

Overview

The CGHV40100F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for general-purpose RF and microwave applications. Operating from a 50 V rail, it delivers up to 3 GHz bandwidth with typical saturated output power of 100 W at 2.0 GHz. Small signal gain reaches 17.5 dB at 2.0 GHz, while drain efficiency achieves 55% at saturation. The device supports linear and compressed amplifier topologies.

Feature Summary

• High-power GaN HEMT technology enabling broadband operation up to 3 GHz
• Robust performance under high voltage conditions with 50 V supply compatibility
• Designed for linear and compressed amplifier circuit integration

Applications

• Broadband amplifier development
• Linear RF circuit design
• Compressed amplifier configurations

Procurement Notes

Verify the specific package type required, as the F suffix denotes the flange variant. Confirm that the application environment remains within the specified thermal limits and case temperature ranges. Ensure proper handling procedures are followed due to the sensitivity of the semiconductor junction. Review the latest datasheet revision for any updates to absolute maximum ratings or electrical characteristics before finalizing system designs.

Selection Notes

Select this component when designing systems requiring high output power combined with wide bandwidth capabilities. The 50 V operating voltage makes it suitable for efficient power amplification stages. Consider the thermal management requirements carefully, as the device generates significant heat during high-power operation. Evaluate the need for large-signal models in simulation tools like ADS or MWO for accurate circuit prediction.

Part Context

This part belongs to MACOM's CGHV series of high-voltage GaN HEMTs. It shares core technological attributes with other devices in the family but is distinguished by its specific power output and frequency coverage. The flange package facilitates direct mounting to heatsinks, supporting high-power dissipation needs in demanding RF environments.

Replacement Considerations

The CGHV40100P serves as the pill-package alternative to the flange-mounted CGHV40100F. Both variants share identical electrical specifications and performance metrics. Selection between them depends primarily on mechanical mounting constraints and thermal interface requirements rather than functional differences.