CGHV40320D-GP4-2

Overview

The CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die designed for high-power RF applications. It operates up to 4.0 GHz with a typical saturated power output of 320 W and a typical power added efficiency of 65%. The device utilizes a 50 V drain-source voltage and features a breakdown voltage of 125 V. Key electrical characteristics include a gate pinch-off voltage ranging from -3.8 V to -2.3 V, a maximum drain current of 12 A, and an on-resistance of 0.07 Ω. The component supports operation at junction temperatures up to 225°C.

Feature Summary

• High power density and wide bandwidth capabilities inherent to GaN technology
• High breakdown voltage ensuring robust operation under stress
• Optimized for linear amplification of complex waveforms
• Bare die format suitable for custom mounting and integration

Applications

• Broadband amplifiers
• Tactical communications systems
• Satellite communications
• Industrial, Scientific, and Medical (ISM) amplifiers
• Linear amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct configuration. Confirm that the received product matches the bare die specification rather than a packaged module. Ensure handling procedures account for the sensitivity of the semiconductor material during assembly.

Selection Notes

Select this component for designs requiring high output power in the L-band or S-band frequencies. Consider the thermal management requirements associated with the specified power dissipation and junction temperature limits. Evaluate the need for large signal models compatible with ADS or MWO for accurate circuit simulation prior to implementation.

Part Context

This part belongs to MACOM's portfolio of GaN-on-SiC transistors, which are engineered for superior performance compared to silicon or gallium arsenide alternatives. The series offers higher saturated electron drift velocity and thermal conductivity, enabling greater power density and wider bandwidths in RF power amplifier designs.

Replacement Considerations

Consult the official datasheet for direct substitute part numbers. Verify compatibility regarding pinout, thermal resistance, and electrical ratings before substituting any other GaN HEMT devices.