CGHV59350F

Overview

The CGHV59350F is a gallium nitride (GaN) amplifier operating in the 5.2 to 5.9 GHz frequency range. It delivers a minimum output power of 350 W with a large signal gain of 10.5 dB and a drain efficiency of 55%. The device features an internally matched 50 Ω input and output, designed for high temperature operation. It is supplied in a ceramic/metal flange or pill package.

Feature Summary

• Internally matched to 50 Ω impedance
• High temperature operation capability
• RoHS compliant construction

Applications

• C-Band RADAR systems

Procurement Notes

Verify the specific datasheet revision and ordering suffix against current MACOM documentation before procurement. Confirm that the bulk packaging format aligns with assembly requirements. Ensure compliance with export control classifications and environmental directives applicable to the destination region.

Selection Notes

Select this component for applications requiring high power density and wide bandwidth in the C-band spectrum. Evaluate thermal management strategies carefully, as junction temperature limits are critical for reliability. Verify biasing sequences and RF protection circuits to ensure device ruggedness under mismatched load conditions.

Part Context

This part belongs to MACOM's GaN on Silicon Carbide (GaN-on-SiC) amplifier portfolio. It utilizes a ceramic/metal flange or pill package designed for robust thermal dissipation and high-power RF performance in demanding radar environments.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Do not assume cross-compatibility with other series without explicit manufacturer confirmation.