CGHV60075D5-GP4

Overview

The CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die designed for high-power, broadband applications. It operates at frequencies up to 6.0 GHz with a typical saturated power output of 75 W and a drain efficiency of 60% at 6 GHz. The device features a breakdown voltage of 125 V and operates on a 50 V supply rail. Small signal gain reaches 19 dB at 4 GHz and 17 dB at 6 GHz. The bare die measures 3000 x 820 microns with a thickness of 100 microns.

Feature Summary

• High power density utilizing GaN HEMT technology
• Broadband operation capability up to 6.0 GHz
• High breakdown voltage supporting robust performance
• Suitable for linear amplification of complex waveforms

Applications

• Cellular Infrastructure
• Broadband Amplifiers
• Test Instrumentation
• Class A, AB Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to ensure correct configuration. Confirm that the received item matches the bare die specification rather than a packaged module. Ensure handling procedures account for the Gel-Pak shipping container and non-adhesive tacky membrane used to immobilize the die during transit.

Selection Notes

Select this component when designing circuits requiring high power output in a compact form factor up to 6 GHz. Consider the 50 V operating requirement and the need for eutectic die attach using AuSn solder. Evaluate thermal management capabilities given the junction-to-case thermal resistance specifications for reliable long-term operation under maximum dissipation conditions.

Part Context

This part belongs to the CGHV series of GaN HEMTs from MACOM Technology Solutions. These devices leverage superior GaN properties compared to silicon or gallium arsenide, offering higher breakdown voltage, saturated electron drift velocity, and thermal conductivity. The series targets applications demanding greater power density and wider bandwidths than traditional semiconductor technologies can provide.

Replacement Considerations

Consult MACOM's official substitution matrix for verified alternatives. No public substitute part numbers are confirmed in the provided datasheet.